TITLE

Thermal expansion of gallium arsenide layers grown by molecular beam epitaxy at low temperatures

AUTHOR(S)
Leszczynski, M.; Walker, J.F.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1484
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the thermal expansion of molecular beam epitaxy grown GaAs with x-ray diffraction method. Influence of nonstoichiometric excess of As on Ga; Reduction of arsenic excess by air annealing; Structural properties of LT GaAs layers.
ACCESSION #
4338112

 

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