Thermal expansion of gallium arsenide layers grown by molecular beam epitaxy at low temperatures

Leszczynski, M.; Walker, J.F.
March 1993
Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1484
Academic Journal
Examines the thermal expansion of molecular beam epitaxy grown GaAs with x-ray diffraction method. Influence of nonstoichiometric excess of As on Ga; Reduction of arsenic excess by air annealing; Structural properties of LT GaAs layers.


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