TITLE

Carbon precipitation in silicon: Why is it so difficult?

AUTHOR(S)
Taylor, W.J.; Tan, T.Y.; Gosele, U.
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3336
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the influence of oxygen on carbon precipitation in silicon. Use of infrared spectrometer in measuring oxygen and carbon concentration; Correlation between volume shrinkage and carbon precipitation; Effectiveness of higher energy interface in preventing self-interstitial supersaturation.
ACCESSION #
4338083

 

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