Long-wavelength PtSi infrared detectors fabricated by incorporating a p[sup +] doping spike

Lin, T.L.; Park, J.S.; George, T.; Jones, E.W.; Fathauer, R.W.; Maserjian, J.
June 1993
Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3318
Academic Journal
Examines the fabrication of platinum silicide infrared detectors by incorporating a p[sup +] doping spike grown by molecular beam epitaxy. Use of transmission electron microscopy in determining crystal quality; Impact of photoexcited carrier collection on detector response; Relevance of low growth temperature in doping profiles.


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