TITLE

Electrical conduction in low temperature grown InP

AUTHOR(S)
Khirouni, K.; Maaref, H.; Bourgoin, J.C.; Garcia, J.C.
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3315
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the electrical conduction in low temperature grown indium phosphide (InP) semiconductors. Use of photoluminescence in revealing large concentration of point defects; Efficiency of molecular beam epitaxy in growing InP layers; Influence of higher temperature on conductive materials.
ACCESSION #
4338076

 

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