TITLE

2.51 eV photoluminescence from Zn-doped CuAlSe[sub 2] epilayers grown by low-pressure

AUTHOR(S)
Chichibu, S.; Matsumoto, S.; Shirakata, S.; Isomura, S.; Higuchi, H.
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3306
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the photoluminescence (PL) peak in zinc-doped copper aluminum selenide epilayers grown by low-pressure metalorganic chemical vapor deposition. Absence of PL peak in aluminum-rich layers; Use of secondary ion mass spectrometry in estimating zinc doping concentration; Effect of zinc doping on x-ray diffraction pattern.
ACCESSION #
4338073

 

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