2.51 eV photoluminescence from Zn-doped CuAlSe[sub 2] epilayers grown by low-pressure

Chichibu, S.; Matsumoto, S.; Shirakata, S.; Isomura, S.; Higuchi, H.
June 1993
Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3306
Academic Journal
Examines the photoluminescence (PL) peak in zinc-doped copper aluminum selenide epilayers grown by low-pressure metalorganic chemical vapor deposition. Absence of PL peak in aluminum-rich layers; Use of secondary ion mass spectrometry in estimating zinc doping concentration; Effect of zinc doping on x-ray diffraction pattern.


Related Articles

  • Excitation intensity dependence of photoluminescence in Ga0.52In0.48P. DeLong, M. C.; Taylor, P. C.; Olson, J. M. // Applied Physics Letters;8/6/1990, Vol. 57 Issue 6, p620 

    The excitation intensity dependence of the photoluminescence (PL) from Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates has been investigated as a function of epitaxial layer growth temperature and substrate orientation. It is well known that the degree of ordering...

  • Crecimiento epitaxial de un pozo cuántico de AlxGa1-xAs/GaAs/AlxGa1-xAs utilizando vapores metalorgánicos y arsénico sólido como precursores. Castillo-Ojeda, R.; Galván-Arellano, M.; Díaz-Reyes, J. // Superficies y Vacío;2013, Vol. 26 Issue 4, p120 

    In this work is discussed the use of a deposition system of semiconductor epitaxial layers of the MOCVD type (Metal Organic Chemical Vapour Deposition), different of the conventional ones that use arsine as arsenic precursor. In the growth system has replaced the arsine by elemental arsenic,...

  • Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown by MOVPE on GaAs(001) Substrates. Vavilova, L.S.; Vinokurov, D.A.; Kapitonov, V.A.; Murashova, A.V.; Nevedomski&ibreve;, V.N.; Poletaev, N.K.; Sitnikova, A.A.; Tarasov, I.S.; Shamakhov, V.V. // Semiconductors;Sep2003, Vol. 37 Issue 9, p1080 

    Optical and structural properties of InGaAsP solid solutions grown by MOVPE at 600°C on GaAs(001) substrates are studied. The photoluminescence spectra of InGaAsP solid solutions with a composition corresponding to the miscibility gap contain a main band and an additional auxiliary band. It...

  • Acceptor-bound exciton transition in Mg-doped AlN epilayer. Nepal, N.; Nakami, M. L.; Nam, K. B.; Lin, J. Y.; Jiang, H. X. // Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2271 

    Mg-doped AlN epilayers grown by metal organic chemical-vapor deposition have been studied by deep ultraviolet time-resolved photoluminescence (PL) spectroscopy. A PL emission line at 6.02 eV has been observed at 10 K in Mg-doped AlN, which is about 40 meV below the free-exciton transition in...

  • Characteristics of InGaAs quantum dots grown on tensile-strained GaAs1-xPx. Kim, N. H.; Ramamurthy, P.; Mawst, L. J.; Kuech, T. F.; Modak, P.; Goodnough, T. J.; Forbes, D. V.; Kanskar, M. // Journal of Applied Physics;5/1/2005, Vol. 97 Issue 9, p093518 

    InGaAs quantum dots (QDs) embedded in tensile-strained GaAs1-xPx (x=0.0–0.45) barrier layers are grown using low-pressure metal-organic chemical-vapor deposition. Variable-temperature photoluminescence (PL) measurement demonstrates that the lowest-energy QD transition can be blueshifted...

  • Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy. Hiruma, K.; Tomioka, K.; Mohan, P.; Yang, L.; Noborisaka, J.; Hua, B.; Hayashida, A.; Fujisawa, S.; Hara, S.; Motohisa, J.; Fukui, T. // Journal of Nanotechnology;2012, p1 

    The fabrication of GaAs- and InP-based III-V semiconductor nanowires with axial/radial heterostructures by using selective-area metal-organic vapor-phase epitaxy is reviewed. Nanowires, with a diameter of 50-300nm and with a length of up to 10 μm, have been grown along the (111)B or (111)A...

  • GaInP semiconductor compounds doped with the Sb isovalent impurity. Skachkov, A. // Semiconductors;May2015, Vol. 49 Issue 5, p579 

    GaInPSb layers containing different Sb fractions are produced by metal-organic vaporphase epitaxy on GaAs and Ge substrates. The charge-carrier mobilities in the GaInPSb layers are measured at room temperature and 77 K. The room-temperature charge-carrier mobilities in the GaInPSb layers...

  • Low-temperature (10 K) photoluminescence of Ga1-xInxPyAs1-y quantum wells grown by metalorganic chemical vapor deposition. Ludowise, M. J.; Biswas, D.; Bhattacharya, P. K. // Applied Physics Letters;3/5/1990, Vol. 56 Issue 10, p958 

    Ga1-x Inx As1-y Py /InP (x=0.72, y=0.39) lattice-matched quantum wells (QWs) are grown by low-pressure metalorganic chemical vapor deposition on (100) and 3° misoriented substrates, using different variations of growth technique. Low-temperature (10 K) photoluminescence is used to...

  • Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition. Ugolini, C.; Nepal, N.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M. // Applied Physics Letters;10/9/2006, Vol. 89 Issue 15, p151903 

    The authors report on the synthesis of Er-doped GaN epilayers by in situ doping by metal-organic chemical vapor deposition (MOCVD). The optical and electrical properties of the Er-doped GaN epilayers were studied by photoluminescence (PL) spectroscopy and van der Pauw–Hall method. Both...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics