Determination of oxygen and carbon contaminations in InGaAs molecular beam epitaxy using growth

Harmand, Jean-Christophe; Juhel, Marc
June 1993
Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3300
Academic Journal
Investigates oxygen and carbon contaminations in indium gallium arsenide layers grown by molecular beam epitaxy with growth interruptions. Correlation between the electrical properties of oxygen contamination and arsenic source; Use of secondary ion mass spectroscopy for contamination detection; Decomposition of gaseous arsenic trioxide.


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