TITLE

Si[sub 3]N[sub 4]/Si/In[sub 0.53]Ga[sub 0.47]As depletion-mode metal-insulator-semiconductor

AUTHOR(S)
Mui, D.S.L.; Wang, Z.; Biswas, D.; Demirel, A.L.; Teraguchi, N.; Reed, J.; Morkoc, H.
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3291
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the characteristics of Si[sub 3]N[sub 4]/Si/In[sub 0.53]Ga[0.47]As depletion-mode on metal-insulator-semiconductor field-effect transistors. Impact of pseudomorphic silicon (Si) layer on silicon oxide insulator; Influence of Si interlayer on gallium oxidation; Use of phosphoric/nitric acid in etching aluminum materials.
ACCESSION #
4338068

 

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