TITLE

Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films

AUTHOR(S)
Nickel, N.H.; Johnson, N.M.; Jackson, W.B.
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3285
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the hydrogen passivation of grain boundary defects in undoped polycrystalline silicon thin films. Use of electron spin resonance in defect detection; Enhancement of hydrogen diffusion in the presence of grain boundaries; Use of low pressure chemical vapor deposition.
ACCESSION #
4338066

 

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