TITLE

Atomic configuration dependent secondary electron emission from reconstructed silicon surfaces

AUTHOR(S)
Homma, Yoshikazu; Suzuki, Mineharu; Tomita, Masato
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3276
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effect of atomic configuration on secondary electron (SE) emission from reconstructed silicon surfaces. Use of scanning electron microscopy for imaging surface topography; Sensitivity of SE emission to the atomic configuration; Evaluation of the relationship between the detection angle and dimer rows.
ACCESSION #
4338063

 

Related Articles

  • Calculated effects of work function changes on the dispersion of secondary electron emission data: Application for Al and Si and related elements. Cazaux, Jacques // Journal of Applied Physics;Jul2011, Vol. 110 Issue 2, p024906 

    The published secondary electron yield (SEY) data, δ = f(E°), are characterized by a poor level of agreement, rarely more than 25% and lower for a common element such as Al. Some possible sources of discrepancies are related to sample preparation, leading to differences in surface...

  • Theoretical studies of H2 desorption from Si(100)–2×1H. Jing, Z.; Whitten, J. L. // Journal of Chemical Physics;5/1/1993, Vol. 98 Issue 9, p7466 

    Theoretical studies of H2 desorption from a cluster model of the Si(100)–2×1H surface show that the desorption pathway is symmetrical and has a desorption energy barrier of 3.75 eV and a corresponding adsorption energy barrier of 1.15 eV. The proper treatment of electron correlation...

  • An accurate description of the ground and excited states of SiH. Kalemos, Apostolos; Mavridis, Aristides; Metropoulos, Aristophanes // Journal of Chemical Physics;4/15/2002, Vol. 116 Issue 15, p6529 

    The astrophysical importance of the SiH radical has motivated significant experimental and theoretical work. However, only the X [sup 2]Π and A [sup 2]Δ states of SiH have been extensively investigated experimentally, while the study of higher excited states is rather limited. From a...

  • Observation of magnetic domains with spin-polarized secondary electrons. Koike, K.; Hayakawa, K. // Applied Physics Letters;1984, Vol. 45 Issue 5, p585 

    Magnetic domain structure on a silicon iron (001) surface has been observed using a new scanning electron microscope (SEM), in which image contrast was obtained by using spin polarization of secondary electrons. From this image and an absorption current image of the same area, it has been...

  • Magnetic resonance spectroscopy in silver-doped silicon. Son, N. T.; Gregorkiewicz, T.; Ammerlaan, C. A. J. // Journal of Applied Physics;2/15/1993, Vol. 73 Issue 4, p1797 

    Discusses a study which analyzed several new electron paramagnetic resonance spectra in silver-doped silicon. Spectra detected in n-type samples; Centers that have been tentatively identified as silver-related complexes; Elements of group Ib of the periodic table that attract considerable...

  • Theoretical study of the reaction mechanism for the interaction of Si+ with disilane. Al-Laham, Mohammad A.; Raghavachari, Krishnan // Journal of Chemical Physics;8/15/1991, Vol. 95 Issue 4, p2560 

    The reaction mechanism for the interaction of Si+ with disilane has been studied by means of accurate ab initio molecular orbital techniques including polarized basis sets, effects of electron correlation, and zero-point corrections. There are two main accessible channels for the reaction, via...

  • Metastable defects in 6H–SiC: experiments and modeling. Hemmingsson, C. G.; Son, N. T.; Kordina, O.; Janze´n, E. // Journal of Applied Physics;2/1/2002, Vol. 91 Issue 3, p1324 

    Using various junction space-charge techniques, annealing, and simulation, a metastable defect in 6H SiC have been characterized. We suggest a configuration coordinate diagram with three configurations, where two of them can only exist when the defect is occupied by one or more electrons. The...

  • Reduction of crossed-field diode transmitted current due to anode secondary emission. Gopinath, V.P.; Vanderberg, B.H. // Physics of Plasmas;Jan1998, Vol. 5 Issue 1, p261 

    Presents the reduction of crossed-field diode transmitted current due to anode secondary emission. Effects of secondary electrons on charge density and the resultant electric field; Contributions of secondary electrons to the space charge; Results of the reduction in transmitted current.

  • Secondary electron emission from dielectric materials of a Hall thruster with segmented electrodes. Dunaevsky, A.; Raitses, Y.; Fisch, N. J. // Physics of Plasmas;Jun2003, Vol. 10 Issue 6, p2574 

    The discharge parameters in Hall thrusters depend strongly on the yield of secondary electron emission from channel walls. Comparative measurements of the yield of secondary electron emission at low energies of primary electrons were performed for several dielectric materials used in Hall...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics