TITLE

Microstructural transition and degraded opto-electronic properties in amorphous SiGe:H alloys

AUTHOR(S)
Jones, S.J.; Chen, Y.; Williamson, D.L.; Zedlitz, R.; Bauer, G.
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3267
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the microstructural transition and degraded opto-electronic properties in hydrogenated amorphous silicon-germanium (a-SiGe:H) alloys. Deterioration of opto-electronic properties; Preparation of samples using direct current glow discharge system; Measurement of a-SiGe:H using transmission electron microscope.
ACCESSION #
4338060

 

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