TITLE

Fabrication and characteristics of 8-hydroxyquinoline aluminum/aromatic diamine organic

AUTHOR(S)
Ohmori, Yutaka; Fujii, Akihiko; Uchida, Masao; Morishima, Chikayoshi; Yoshino, Katsumi
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3250
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the fabrication and characteristics of 8-hydroxyquinoline aluminum and aromatic diamine multiple quantum well (MQW). Growth of MQW by organic molecular beam deposition; Indication of a quantum size effect by the photoluminescence; Production of an electroluminescent diode.
ACCESSION #
4338054

 

Related Articles

  • Investigation of tensile-strained InGaAlP multiquantum-well active regions by photoluminescence measurements. Watanabe, Minoru; Matsuura, Hatsumi; Shimada, Naohiro // Journal of Applied Physics;12/15/1994, Vol. 76 Issue 12, p7942 

    Presents a study which investigated the use of tensile-strained multiquantum-well (MQW) active region in InGaAIP MQW laser diodes through photoluminescence measurements. Methods; Results; Discussion.

  • Time-resolved photoluminescence measurements of InGaN light-emitting diodes. Pophristic, M.; Long, F. H.; Tran, C.; Ferguson, I. T.; Karlicek, R. F. // Applied Physics Letters;12/14/1998, Vol. 73 Issue 24 

    We have used time-resolved photoluminescence (PL) to examine light-emitting diodes made of InGaN/GaN multiple quantum wells (MQWs) before the final stages of processing. The time-resolved photoluminescence from a dim MQW was quenched by nonradiative recombination centers. The PL kinetics from a...

  • Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells. Perlin, Piotr; Iota, Valentin // Applied Physics Letters;6/2/1997, Vol. 70 Issue 22, p2993 

    Examines the influence of pressure on photoluminescence and electroluminescence in gallium nitride/indium gallium nitride/aluminum gallium nitride quantum wells. Use of high-brightness single-quantum-well light emitting diodes; Discovery of pressure shift on primary luminescence peak of each...

  • Recombination dynamics in InGaN quantum wells. Jeon, E. S.; Kozlov, V.; Song, Y.-K.; Vertikov, A.; Kuball, M.; Nurmikko, A. V.; Liu, H.; Chen, C.; Kern, R. S.; Kuo, C. P.; Craford, M. G. // Applied Physics Letters;12/30/1996, Vol. 69 Issue 27, p4194 

    Transient photoluminescence measurements are reported on a thin InGaN single quantum well, encompassing the high injection regime. The radiative processes that dominate the recombination dynamics, especially at low temperatures, show the impact of localized electronic states that are distributed...

  • Carrier screening effects in piezoelectric strained InGaAs/GaAs quantum wells grown on the [111]B axis. Sale, T. E.; Woodhead, J.; Rees, G. J.; Grey, R.; David, J. P. R.; Pabla, A. S.; Rodriguez-Gíronés, P. J.; Robson, P. N.; Hogg, R. A.; Skolnick, M. S. // Journal of Applied Physics;11/1/1994, Vol. 76 Issue 9, p5447 

    Presents a study on excitation-power-dependent blue shifts in photoluminescence and electroluminiscence in piezoelectric strained layer multiple quantum wells incorporated in p-i-n diodes. Introduction strained quantum wells; Experimental setup; Results.

  • Time- and locally resolved photoluminescence of semipolar GaInN/GaN facet light emitting diodes. Wunderer, Thomas; Brückner, Peter; Hertkorn, Joachim; Scholz, Ferdinand; Beirne, Gareth J.; Jetter, Michael; Michler, Peter; Feneberg, Martin; Thonke, Klaus // Applied Physics Letters;4/23/2007, Vol. 90 Issue 17, p171123 

    The authors investigate the carrier lifetime and photoluminescence (PL) intensity of a semipolar GaInN/GaN sample which was realized by growing five GaInN/GaN quantum wells on the {1101} side facets of selectively grown n-GaN stripes that have a triangular shape running...

  • Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal. Truong, T. A.; Campos, L. M.; Matioli, E.; Meinel, I.; Hawker, C. J.; Weisbuch, C.; Petroff, P. M. // Applied Physics Letters;1/12/2009, Vol. 94 Issue 2, pN.PAG 

    A noninvasive fabrication process involving soft nanoimprint lithography is used to pattern a photonic crystal (PhC) in titania film for enhanced light extraction from a GaN light emitting diode (LED). This technique avoids damaging the LED structure by the etching process, while...

  • Stimulated emission in AlGaN/AlGaN quantum wells with different Al content. Mickevicˇius, J.; Jurkevicˇius, J.; Kazlauskas, K.; Zˇukauskas, A.; Tamulaitis, G.; Shur, M. S.; Shatalov, M.; Yang, J.; Gaska, R. // Applied Physics Letters;2/20/2012, Vol. 100 Issue 8, p081902 

    Stimulated emission (SE) is studied in AlGaN/AlGaN multiple quantum wells (MQWs) with different Al content grown on sapphire substrate. The spectra of spontaneous and stimulated emission and their transformations with increasing temperature as well as stimulated emission thresholds were measured...

  • Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes. Yasan, A.; McCiintock, R.; Mayes, K.; Kim, D. H.; Kung, P.; Razeghi, M. // Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4083 

    We investigated optical properties of single quantum well AlGaN-based UV 280 nm light-emitting diodes using temperature-dependent photoluminescence (PL) measurement. We found an “S-shaped” temperature dependence of the peak energy. From the Arrhenius plot of integrated PL intensity,...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics