Light emission in thermally oxidized porous silicon: Evidence for oxide-related luminescence

Prokes, S.M.
June 1993
Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3244
Academic Journal
Examines the luminescence behavior of thermally oxidized porous silicon (PSi). Difference of the oxidized and unoxidized infrared spectra; Oxidation results in the PSi luminescence; Analysis of the photoluminescence behavior of oxidized PSi for extended oxidation times.


Related Articles

  • Luminescence of porous silicon in the infrared spectral region at room temperature. Polisski─▒, G.; Koch, F.; Sreseli, O. M.; Andrianov, A. V. // Semiconductors;Mar1997, Vol. 31 Issue 3, p304 

    A method for preparing mesoporous silicon on n-type substrates has been developed. The material exhibits two intense bands of photo- and electroluminescence at room temperature: a primary one in the range 1.4-1.8 eV, and a low-energy infrared band near 1-1.2 eV. It is shown that the position of...

  • Photoluminescence spectra from porous silicon (111) microstructures: Temperature and.... Perry, Clive H.; Feng Lu // Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3117 

    Examines the visible and near-infrared (IR) photoluminescence (PL) emission spectra from p-type porous silicon(111) microstructures. Observation of strong near-infrared intrinsic band-to-band emission above and below the bulk silicon band gap; Enhancement of the luminescence in the IR spectra;...

  • Excitation of Luminescence in Porous Silicon with Adsorbed Ozone Molecules. Kuznetsov, S. N.; Pikulev, V. B.; Saren, A. A.; Gardin, Yu. E.; Gurtov, V. A. // Semiconductors;May2001, Vol. 35 Issue 5, p583 

    A new effect of the excitation of luminescence in porous silicon during adsorption of ozone from the gaseous phase was investigated. The signals of ozone-induced luminescence and photoluminescence decay with time of ozone exposure in a strictly correlated way; simultaneously, an oxide-phase...

  • Luminescence of porous silicon in a weak confinement regime. Polisski, G.; Heckler, H.; Kovalev, D.; Schwartzkopff, M.; Koch, F. // Applied Physics Letters;8/24/1998, Vol. 73 Issue 8 

    We report on luminescence properties of porous silicon emitting efficient light only a few tens of meV above the band gap of bulk Si. This emission band has a well-defined low-energy limit coincident with the position of the lowest possible luminescing exciton state of bulk silicon. The resonant...

  • Theoretical analysis of the geometries of the luminescent regions in porous silicon. Hill, Nicola A.; Whaley, K. Birgitta // Applied Physics Letters;8/21/1995, Vol. 67 Issue 8, p1125 

    Analyzes the geometries of luminescent regions in porous silicon. Calculation of luminescence energies of crystalline silicon nanostructures; Correlation between luminescence wavelength and shape of emitting nanostructures; Information on the electrical properties of silicon nanostructures.

  • Influence of sample oxidation on the nature of optical luminescence from porous silicon. Coulthard, I.; Antel, W. J.; Antel Jr., W.J.; Freeland, J. W.; Freeland, J.W.; Sham, T. K.; Sham, T.K.; Naftel, S. J.; Naftel, S.J.; Zhang, P. // Applied Physics Letters;7/24/2000, Vol. 77 Issue 4 

    Site-selective luminescence experiments were performed upon porous-silicon samples exposed to varying degrees of oxidation. The source of different luminescence bands was determined to be due to either quantum confinement in nanocrystalline silicon or defective silicon oxide. Of particular...

  • Fast and slow visible luminescence bands of oxidized porous Si. Kovalev, D.I.; Yaroshetzkii, I.D.; Muschik, T.; Petrova-Koch, V.; Koch, F. // Applied Physics Letters;1/10/1994, Vol. 64 Issue 2, p214 

    Examines the fast and slow visible luminescence bands of oxidized porous silicon. Increase of luminescence intensity with the oxidation degree; Separation of luminescence components using periodic pulse excitation with a repetition time; Preparation of porous layers by anodic etching; Mechanism...

  • Generation of ballistic electrons in nanocrystalline porous silicon layers and its application to a solid-state planar luminescent device. Nakajima, Yoshiki; Kojima, Akira; Koshida, Nobuyoshi // Applied Physics Letters;9/23/2002, Vol. 81 Issue 13, p2472 

    A principle of planar-type visible light emission is presented using ballistic electrons as excitation source. The device is composed of a semitransparent top electrode, a thin film of fluorescent material, a nanocrystalline porous silicon (nc-PS) layer, an n-type silicon wafer, and an ohmic...

  • Photolithographic fabrication of micron-dimension porous Si structures exhibiting visible.... Doan, Vincent V.; Sailor, Michael J. // Applied Physics Letters;2/3/1992, Vol. 60 Issue 5, p619 

    Describes the photolithographic fabrication of micron-dimension porous silicon (Si) structures exhibiting visible luminescence. Results of the anodic electrochemical etching of Si in ethanol/HF aqueous solution; Etching mechanism of luminescent porous Si pattern into Si samples; Display of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics