TITLE

Voltage-tunable multiple quantum well photodetector vertically integrated with voltage-tunable

AUTHOR(S)
Goossen, K.W.; Cunningham, J.E.; Santos, M.B.; Jan, W.Y.
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3229
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the voltage-tunable band-gap photodetector vertically integrated with a voltage-tunable multiple quantum well filter. Measurement of the spectra using a lamp or monochromator; Enhancement of detector response at the band edge; Fabrication of the two-dimensional array.
ACCESSION #
4338047

 

Related Articles

  • Magnetically tuned wide-band quantum well infrared photodetectors. Huang, Danhong; Lyo, S.K. // Journal of Applied Physics;4/15/1998, Vol. 83 Issue 8, p4531 

    Provides information on a study of magnetically tuned wide-band quantum well infrared photodetectors. Information on self-consistent elecron eigenstates; Detailed information on many-body effects on optical absorption; Methodology used to conduct the study; Results of the study; Discussion on...

  • Local responsivity in quantum well infrared photodetectors. Ershov, M. // Journal of Applied Physics;12/15/1999, Vol. 86 Issue 12, p7059 

    Presents a theoretical and computational study of physical effects in quantum well infrared photodetectors (QWIP) under localized excitation. Numerical model of QWIP; Simulation results; Analytical modeling; Conclusions.

  • Two-dimensional rough surface couplers for broadband quantum-well infrared photodetectors. Jandhyala, Vikram; Sengupta, Deepak; Michielssen, Eric; Shanker, Balasubramaniam; Stillman, Greg // Applied Physics Letters;12/14/1998, Vol. 73 Issue 24 

    Rough surfaces are proposed as a class of couplers for achieving high absorption in broadband quantum-well infrared photodetectors (QWIPs). The performance of these structures is predicted numerically using the steepest-descent fast-multipole method, a recently developed fast electromagnetic...

  • Tailoring detection bands of InAs quantum-dot infrared photodetectors using In[sub x]Ga[sub 1-x]As strain-relieving quantum wells. Kim, Eui-Tae; Chen, Zhonghui; Madhukar, Anupam // Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3341 

    We report on tailoring detection bands of InAs quantum-dot infrared photodetectors (QDIPs) using In[sub x]Ga[sub 1-x]As strain-relieving capping layers that also act as quantum wells (QWs). QDIPs with InAs QDs capped by a 20 ML In[sub 0.15]Ga[sub 0.85]As QW show a sharp photoresponse at ∼9...

  • GaAs/AlGaAs quantum well photodetectors with a cutoff wavelength at 28 μm. Perera, A. G. U.; Shen, W. Z.; Matsik, S. G.; Liu, H. C.; Buchanan, M.; Schaff, W. J. // Applied Physics Letters;3/30/1998, Vol. 72 Issue 13 

    Presents a far-infrared quantum well photodetectors (QWIP) based on a bound-to-bound intersubband transition in gallium arsenide/aluminum gallium arsenide. Comparison of responsivity with other QWIP detectors; Peak responsivity and detectivity measurements of the detectors.

  • Lateral photocurrent spreading in single quantum well infrared photodetectors. Ershov, M. // Applied Physics Letters;6/1/1998, Vol. 72 Issue 22 

    Lateral physical effects in single quantum well infrared photodetectors (SQWIPs) under nonuniform illumination over the detector area are considered. These effects are due mainly to the in-plane transport of the photoinduced charge in the QW. The length of the lateral photocurrent spreading is...

  • Background limited infrared performance of n-type Si-SiGe(111) quantum well infrared photodetector. Shadrin, V.D. // Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p70 

    Reports the growth of quantum well infrared photodetector (QWIP) based on n-type silicon-silicon germide structures in crystallographic direction. Manifestation of a thermogeneration dark current; Analysis on background limited infrared performance; Discussion on the concentration dependency of...

  • Strained InGaAs/AlGaAs quantum well infrared detectors at 4.5 mum. Fiore, A.; Rosencher, E.; Bois, P.; Nagle, J.; Laurent, N. // Applied Physics Letters;1/24/1994, Vol. 64 Issue 4, p478 

    Demonstrates midinfrared photodetection at delta=4.5 micrometer in multi-quantum well detector using strained GaAs compound alloy grown on GaAs substrate. Presentation of a very low dark current; Period of the structure by x-ray diffraction measurement; Performance on gallium arsenide-based...

  • Dual-wavelength multiple quantum well n-i-p-i-n photodetector using an optically bistable abrupt absorption edge. Tokuda, Yasunori; Kanamoto, Kyozo; Abe, Yuji; Tsukada, Noriaki // Applied Physics Letters;1/15/1990, Vol. 56 Issue 3, p227 

    A novel method for wavelength-selective demultiplexing photodetection, making use of an extremely abrupt absorption edge of the optical bistability, has been proposed. As a demonstration of the principle, experimental data are presented on the dual-wavelength selectivity of an n-i-p-i-n...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics