Rapid thermal annealing induced order-disorder transition in

Hamisch, Y.; Steffen, R.; Forchel, A.; Rontgen, P.
June 1993
Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p3007
Academic Journal
Examines the thermally induced energy level transitions of Ga[sub 0.52]In[sub 0.48]P/(Al[sub 0.35]Ga[sub 0.65])[sub 0.5]In[sub 0.5]P heterostructures. Use of rapid thermal annealing and photoluminescence spectroscopy; Observation on the photoluminescence of the quaternary aluminum gallium arsenide phosphide barrier.


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