TITLE

Donor and acceptor concentrations in molecular beam epitaxial GaAs grown at 300 and 400 degrees C

AUTHOR(S)
Look, D.C.; Robinson, G.D.; Sizelove, J.R.; Stutz, C.E.
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p3004
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the Hall effect measurements on gallium arsenide semiconductors grown at low temperatures by molecular beam epitaxy. Analysis on the capped, conductive layers of the structure; Determination of the donor and acceptor concentration and activation energy in the materials.
ACCESSION #
4338028

 

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