Donor and acceptor concentrations in molecular beam epitaxial GaAs grown at 300 and 400 degrees C

Look, D.C.; Robinson, G.D.; Sizelove, J.R.; Stutz, C.E.
June 1993
Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p3004
Academic Journal
Presents the Hall effect measurements on gallium arsenide semiconductors grown at low temperatures by molecular beam epitaxy. Analysis on the capped, conductive layers of the structure; Determination of the donor and acceptor concentration and activation energy in the materials.


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