Band-gap narrowing determination by photoluminescence on strained B-doped

Souifi, A.; Bremond, G.; Benyattou, T.; Guillot, G.; Dutartre, D.; Warren, P.
June 1993
Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p2986
Academic Journal
Examines the band gap narrowing of heavy boron-doped silicon germanide (SiGe)(p[sup +])/silicon (Si)(p) heterostructures and Si(p [sup +])/Si(p) pseudoheterostructures. Growth of heterostructures by rapid thermal annealing; Use of the photoluminescence process; Observation on the energy band gap of the Si[sub 0.82]Ge[sub 0.18] alloy.


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