Epitaxial growth of (Hg,Mn)Te by the interdiffused multilayer process

Funaki, M.; Brinkman, A.W.; Hallam, T.D.; Tanner, B.K.
June 1993
Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p2983
Academic Journal
Presents the epitaxial growth of (Hg,Mn)Te magnetic semiconductors by metalorganic vapor phase epitaxy on gallium arsenide substrates with a cadmium telluride buffer layer. Precursor partial ratio utilized in the MnTe component growth; Composition and thickness of the film layers.


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