Effect of point defect reactions on behavior of boron and oxygen in degenerately doped

Wijaranakula, W.
June 1993
Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p2974
Academic Journal
Examines the effect of point defect reaction on behavior of boron and oxygen in degenerately doped Czochralski silicon after ambient annealing. Accumulation of boron atoms near the silicon surface; Retardation of oxygen outdiffusion; Use of high resolution electron microscopy.


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