TITLE

Energy levels of the Sb[sub Ga] heteroantisite defect in GaAs:Sb

AUTHOR(S)
Lagowski, J.; Morawski, A.; Sen, S.; Edelman, P.
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p2968
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the transient capacitance of antimony doped bulk gallium arsenide semiconductors. Correlation between energy level and Sb[sub Ga] heteroantisite defect; Factors influencing the levels of electron emission activation energies; Determination of the emission rate signatures.
ACCESSION #
4338015

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics