TITLE

Modeling of piezo-Hall effects in n-doped silicon devices

AUTHOR(S)
Nathan, A.; Manku, T.
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p2947
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the magnetic field and stress induced output response of n-type silicon Hall geometries for various device orientations. Basis on the systemic formulation of piezo-Hall current density equation; Association of output response and offsets with the integrated Hall sensors; Effects of stress on the galvanomagnetic carrier transport.
ACCESSION #
4338009

 

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