Polycrystalline silicon solar cells with a mechanically formed texturization

Bender, H.; Szlufcik, J.; Nussbaumer, H.; Palmers, G.; Evrard, O.; Nijs, J.; Mertens, R.; Bucher, E.; Willeke, G.
June 1993
Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p2941
Academic Journal
Presents the preparation of polycrystalline silicon solar cells using a conventional diffusion and screen printed metallization method. Application of a dicing saw and beveled blades for the V-groove formation; Comparison with the standard nongrooved structure.


Related Articles

  • 20% efficiency silicon solar cells. Blakers, A. W.; Green, M. A. // Applied Physics Letters;1/20/1986, Vol. 48 Issue 3, p215 

    Further improvements in crystalline silicon solar cell performance have been obtained by combining the high levels of surface recombination control demonstrated in earlier passivated emitter solar cells with an improved optical approach. This approach involves the use of microgrooved surfaces...

  • 18% efficient intrinsically passivated laser-processed silicon solar cells. Wood, R. F.; Westbrook, R. D.; Jellison, G. E. // Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p107 

    It is demonstrated that single-crystal silicon solar cells with efficiencies greater than 18% AM1.5 can be fabricated by glow discharge implantation and pulsed excimer laser annealing. A unique characteristic of these cells is that the surfaces are passivated intrinsically to give open circuit...

  • Complete microcrystalline p-i-n solar cell--Crystallline or amorphous cell behavior? Meier, J.; Fluckiger, R. // Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p860 

    Develops a microcrystalline silicon p-i-n solar cell. Application of the high frequency glow discharge method; Behavior of the crystalline cell; Relationship between carrier transport and diffusion; Properties of solar cells.

  • Gettering and hydrogen passivation of edge-defined film-fed grown multicrystalline silicon solar.... Sana, Peyman; Rohatgi, Ajeet; Kalejs, Juris P.; Bell, Richard O. // Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p97 

    Focuses on the gettering and hydrogen passivation of edged-defined film-fed grown multicrystalline silicon solar cells. Preparation of aluminum gettering; Performance of oxide passivation; Impact of the forming gas anneal on cell efficiency.

  • High minority carrier lifetime in phosphorus-gettered multicrystalline silicon. Cuevas, Andres; Stocks, Matthew // Applied Physics Letters;2/24/1997, Vol. 70 Issue 8, p1017 

    Examines the electronic quality of multicrystalline silicon produced by directional solidification. Use of contactless photoconductance instrument to monitor the carrier lifetime; Minority carrier lifetime of the material after phosphorous diffusion gettering treatment; Efficacy of silicon as a...

  • Voids' layer structures in silicon irradiated with high doses of high-energy helium ions. Starchyk, M. I.; Marchenko, L. S.; Pinkovska, M. B.; Shmatko, G. G.; Varnina, V. I. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2015, Vol. 18 Issue 3, p292 

    Structural and optical properties of single crystal silicon irradiated with 27.2 MeV helium ions by using fluences ф = 1016 ion/cm² were studied at various beam currents. It was found that at currents 0.25 to 0.45 µ, heavily damaged layers containing voids were formed in ion path in Si...

  • Low temperature internal gettering of bulk defects in silicon photovoltaic materials. Al-Amin, M.; Murphy, J. D. // Solid State Phenomena;2016, Vol. 242, p109 

    Multicrystalline silicon (mc-Si) substrates are widely used for photovoltaic cells. The minority carrier lifetime in mc-Si is affected by recombination associated with metallic impurities in many forms, such as point-like defects, precipitates and bound to or precipitated at structural defects...

  • On the low carrier lifetime edge zone in multicrystalline silicon ingots. Tingting Jiang; Xuegong Yu; Lei Wang; Xin Gu; Deren Yang // Journal of Applied Physics;2014, Vol. 115 Issue 1, p1 

    We have demonstrated the cause of low minority carrier lifetime corresponding to the edge zone of casting multicrystalline silicon ingots and its influence on the performance of solar cells. It is found that the concentration of substitutional carbon, interstitial oxygen, and dislocation density...

  • Optimization of Rapid Thermal Firing on Silver Metal Contact for Crystalline Silicon Solar Cells. Sepeai, Suhaila; Sulaiman, M. Y.; Sopian, Kamaruzzaman // AIP Conference Proceedings;3/30/2011, Vol. 1328 Issue 1, p196 

    Screen-printed Silver/Argentum (Ag) metallization is used in the photovoltaic industry for the front-side emitter contacts of crystalline silicon solar cells owing to its cost-effectiveness and high throughput. In order to obtain a better understanding for the formation of Ag paste and silicon...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics