Structure of S on passivated GaAs (100)

Lu, Z.H.; Graham, M.J.; Feng, X.H.; Yang, B.X.
June 1993
Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p2932
Academic Journal
Examines the chemical structure and site location characteristics of sulfur on the (NH[sub 4])[sub 2]S-treated gallium arsenide (100) surface. Use of x-ray photoelectron spectroscopy and x-ray absorption near-edge structure; Role of sulfur for the chemical bonds of gallium and arsenic.


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