Carbon doping for AlGaAs/GaAs heterojunction bipolar transistors by molecular-beam epitaxy

Ito, Hiroshi; Nakajima, Osaake; Ishibashi, Tadao
April 1993
Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2099
Academic Journal
Investigates AlGaAs/GaAs heterojunction bipolar transistors carbon doping through molecular-beam epitaxy. Increase in proportion of inactive carbon atoms in GaAs layers; Dependence of mobility on free-carrier concentration; Evaluation of the behavior of carbon dopant in the GaAs layer.


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