Generation mechanisms of crystal defects in arsenic and phosphorous implanted silicon devices

Tsai, H.L.; Hemming, S.M.; Eklund, R.H.; Hosack, H.H.
April 1993
Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2090
Academic Journal
Examines crystal defects in phosphorus and arsenic implanted silicon devices. Implantation of arsenic and phosphorus into silicon; Use of transmission electron microscopy in observing crystal defects; Presentation of the mechanisms of generating crystal defects.


Related Articles

  • Modeling platinum diffusion in silicon. Badr, E.; Pichler, P.; Schmidt, G. // Journal of Applied Physics;2014, Vol. 116 Issue 13, p133508-1 

    Simulations based on diffusion-limited reaction rates were able for the first time to reproduce platinum profiles in silicon for in-diffusion in a wide temperature range from 730 to 950 °C and out-diffusion associated with the ramping-down of the temperature at the end of an industrial...

  • Production and thermal decay of radiation-induced point defects in KD[sub 2]PO[sub 4] crystals. Chirila, M. M.; Garces, N. Y.; Halliburton, L. F.; Demos, S. G.; Land, T. A.; Radousky, H. B. // Journal of Applied Physics;11/15/2003, Vol. 94 Issue 10, p6456 

    Optical absorption and electron paramagnetic resonance (EPR) techniques have been used to characterize the production and thermal decay of point defects in undoped single crystals of KD[sub 2]PO[sub 4] grown at Lawrence Livermore National Laboratory. A crystal was irradiated at 77 K with x rays,...

  • SEM–EBIC investigation of silicon, compensated by zinc during high temperature diffusion annealing. Yakimov, E. B.; Privezentsev, V. V. // Journal of Materials Science: Materials in Electronics;Oct2008 Supplement 1, Vol. 19, p277 

    The properties of n-type silicon doped with phosphorus and compensated by zinc during high temperature diffusion annealing with the subsequent quenching were investigated by the electron beam induced current method in a scanning electron microscope. The investigations were carried out with the...

  • Radially non-uniform interaction of nitrogen with silicon wafers. Akhmetov, V.; Kissinger, G.; Fischer, A.; Morgenstern, G.; Ritter, G.; Kittler, M. // Journal of Materials Science: Materials in Electronics;Oct2008 Supplement 1, Vol. 19, p36 

    Reproducible and pronounced ring-like structures have been revealed on both sides of commercial grade wafers after certain regimes of annealing in pure nitrogen atmosphere at 1200 °C. To minimize residual oxygen concentration during the annealing procedure, a furnace with a Si3N4 coated SiC...

  • Study of structural faults in Ti-diffused lithium niobate. Twigg, M. E.; Maher, D. M.; Nakahara, S.; Sheng, T. T.; Holmes, R. J. // Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p501 

    Transmission electron microscope studies of Ti-doped, congruent lithium niobate (LiNbO3) have shown that extended structural faults are only present within the Ti-diffused layer (i.e., the wave guiding region). Structural faults have also been observed in undoped Li-deficient LiNbO3, though not...

  • Incorporation of Alkali Impurities into Single Crystals of Barium Metaborate �-BaB[sub 2]O[sub 4]. Kokh, A. E.; Kononova, N. G.; Fedorov, P. P.; Boyarkov, V. S.; Zakalyukin, R. M.; Chubarenko, V. A. // Crystallography Reports;Jul2002, Vol. 47 Issue 4, p559 

    The impurities in single crystals of the low-temperature � modification of BaB[sub 2]O[sub 4] grown from flux in the BaB[sub 2]O[sub 4]-Na[sub 2]O system have been studied. The �-BaB[sub 2]O[sub 4] compound was examined by X-ray powder diffraction analysis. The appearance of scattering...

  • Characterization of Defects Generated by Di- and Trivalent Cations in the Potassium-Dihydrophosphate Structure and Their Influence on Growth Kinetics and Face Morphology. Eremina, T. A.; Eremin, N. N.; Kuznetsov, V. A.; Okhrimenko, T. M.; Furmanova, N. G.; Efremova, E. P.; Urusov, V. S. // Crystallography Reports;Dec2002, Vol. 47 Issue 7, pS76 

    Different types of defect sites generated by the impurities of divalent (M[sup 2+]) and trivalent (M[sup 3+]) metals in the structure of potassium dihydrophosphate KH[sub 2]PO[sub 4] (KDP) were revealed by crystal-chemical analysis and computer simulation. These sites cause different...

  • Effect of Microdefects on the Adhesion-Separation Work for Joint Materials. Gol’dshteın, R. V.; Sarychev, M. E. // Doklady Physics;Apr2003, Vol. 48 Issue 4, p176 

    Analyzes a model developed to describe the effect of lattice defects on the adhesion separation work for crystalline materials. Role of layered interfaces of crystalline material in designing new materials; Duration of the crystalline joints under the action of mechanical bonds and...

  • Creating primary defects in calcium fluoride crystals with various prehistories, using pulsed electron irradiation. Chinkov, E. P.; Shtan�ko, V. F. // Physics of the Solid State;Mar99, Vol. 41 Issue 3, p396 

    Optical spectroscopy with nanosecond resolution has been used to study how the prehistory (the presence of impurities, heat treatment) of CaF[sub 2] crystals affects the processes of creating autolocalized excitons (AEs) under the influence of a pulse of accelerated electrons. The breakdown of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics