TITLE

Generation mechanisms of crystal defects in arsenic and phosphorous implanted silicon devices

AUTHOR(S)
Tsai, H.L.; Hemming, S.M.; Eklund, R.H.; Hosack, H.H.
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2090
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines crystal defects in phosphorus and arsenic implanted silicon devices. Implantation of arsenic and phosphorus into silicon; Use of transmission electron microscopy in observing crystal defects; Presentation of the mechanisms of generating crystal defects.
ACCESSION #
4337973

 

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