Hydrogen enhancement of silicon thermal donor formation

Lamp, C.D.; James II, D.J.
April 1993
Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2081
Academic Journal
Examines the silicon thermal donor formation hydrogen enhancement. Characterization of oxygen-related thermal donor; Defects of the thermal donor after hydrogenation; Function of depth for reference and hydrogenated samples.


Related Articles

  • Influence of the Screening Effect on Passivation of p-Type Silicon by Hydrogen. Aleksandrov, O. V. // Semiconductors;Jan2002, Vol. 36 Issue 1, p21 

    Passivation of p-Si by hydrogen through its diffusion was simulated by solving diffusion-kinetic equations with allowance made for hydrogen-acceptor-pair formation, internal electric field, and the screening effect. Screening of hydrogen and acceptor ions by free carriers leads to a decrease in...

  • Hydrogen incorporation in undoped microcrystalline silicon. Johnson, N. M.; Ready, S. E.; Boyce, J. B.; Doland, C. D.; Wolff, S. H.; Walker, J. // Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1626 

    Hydrogen in undoped, unalloyed microcrystalline silicon (μc-Si:H) has been investigated with secondary-ion mass spectrometry (SIMS), Raman spectroscopy, infrared absorption spectroscopy, and nuclear magnetic resonance (NMR). The samples were grown by plasma-enhanced chemical vapor deposition...

  • Hydrogen elimination and phase transitions in pulsed-gas plasma deposition of amorphous and... Srinivasan, Easwar; Parsons, Gregory N. // Journal of Applied Physics;3/15/1997, Vol. 81 Issue 6, p2847 

    Studies the mechanisms of hydrogen elimination during microcrystalline and polycrystalline silicon deposition. Results of infrared and Raman analysis; Mass spectroscopy analysis of abstraction and etching; Infrared spectra of films deposited at 10 W with varying extent of atomic deuterium exposure.

  • An effective-mass model of hydrogenated amorphous silicon: A tail state analysis. O’Leary, Stephen K.; Zukotynski, Stefan; Perz, John M. // Journal of Applied Physics;9/15/1992, Vol. 72 Issue 6, p2272 

    Presents a study that proposed an effective-mass model of hydrogenated amorphous silicon. Impact of hydrogen on the electronic structure of the tail states; Calculations of tail state density-of-states performed in high hydrogen concentration limit; Background on the fundamental properties of...

  • Effect of beam energy and surface temperature on the dissociative adsorption of H[sub 2] on Si(001). Durr, M.; Raschke, M.B.; Hofer, U. // Journal of Chemical Physics;12/15/1999, Vol. 111 Issue 23, p10411 

    Studies the effect of beam energy and surface temperature on the dissociative adsorption of hydrogen on silicon(001) by means of optical second harmonic generation (SHG). Variation in the initial sticking coefficients for terrace adsorption; Strongly activated dissociation process with respect...

  • The photoluminescence spectra of porous silicon boiled in water. Li, K.-H.; Tsai, C.; Shih, S.; Hsu, T.; Kwong, D. L.; Campbell, J. C. // Journal of Applied Physics;10/15/1992, Vol. 72 Issue 8, p3816 

    Presents a study which investigated the photoluminescence (PL) of porous silicon (Si) that has been hydrogenated in boiling water. Result of PL intensity; Spectral changes after annealing and after rehydrogenation; Role of hydrogen in the luminescence of porous Si.

  • Influence of silicon processing in atomic hydrogen on the formation of local molten regions as a result of pulsed irradiation with optical photons. Zakharov, M.V.; Kagadei, V.A.; L�vova, T.N.; Nefedtsev, E.V.; Oskomov, K.V.; Proskurovsky, D.I.; Romanenko, S.V.; Fattakhov, Ya.V.; Khaibullin, I.B. // Semiconductors;Jan2006, Vol. 40 Issue 1, p59 

    The effect of intense atomic hydrogen flux on the defect density in the surface layer of single-crystal silicon is studied. It is shown that the formation of local molten regions by pulsed-light heating of Si samples and further analysis of the local melting pattern can be an efficient tool for...

  • Hydrogen-surface reactions during the growth of hydrogenated amorphous silicon by reactive magnetron sputtering: A real time kinetic study by in situ infrared absorption. Katiyar, M.; Yang, Y. H.; Abelson, J. R. // Journal of Applied Physics;6/15/1995, Vol. 77 Issue 12, p6247 

    Presents a study which identified the hydrogen incorporation and the release processes which control the final hydrogen content of hydrogenated amorphous silicon films. Experimental details; Results and discussion; Conclusion.

  • Hydrogen content in oxygen-doped polysilicon film. Wang, Yunzhen; Huang, Bilin // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p5009 

    Presents a study on the use of helium-hydrogen elastic recoil detection to measure the hydrogen content with depth. Introduction to oxygen-doped semi-insulating polysilicon (SIPOS) films; Silicon-hydrogen bond and its stretching vibrational frequencies in SIPOS film; Conclusions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics