Independent determination of composition and relaxation of partly pseudomorphically grown Si-Ge

Bugiel, E.; Zaumseil, P.
April 1993
Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2051
Academic Journal
Describes the combination of standard x-ray diffraction and transmission electron microscopy measurements for pseudomorphically grown silicon-germanium (Si-Ge) layers on silicon. Relaxation and composition of Si-Ge layers; Determination of the lattice constant variations of the netplanes; Consideration of the methods as a standard for heteroepitaxial layers.


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