TITLE

Room-temperature lasing action in In[sub 0.51]Ga[sub 0.49]P/In[[sub 0.2]Ga[sub 0.8]As

AUTHOR(S)
Levi, A.F.J.; Slusher, R.E.; McCall, S.L.; Pearton, S.J.; Hobson, W.S.
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2021
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the room-temperature lasing action in indium gallium phosphide/indium gallium arsenide microcylinder laser diodes. Information on wavelength and threshold current emission; Inefficiency of carrier density pinning; Effect of spontaneous emission in nonmodal region on carrier pinning.
ACCESSION #
4337949

 

Related Articles

  • Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (?=3.3 �m) due to nonlinear optical effects. Danilova, A. P.; Danilova, T. N.; Imenkov, A. N.; Kolchanova, N. M.; Stepanov, M. V.; Sherstnev, V. V.; Yakovlev, Yu. P. // Semiconductors;Feb99, Vol. 33 Issue 2, p210 

    A study has been made of wavelength tuning in double heterostructure InAsSb/InAsSbP-based diode lasers. A simple mathematical model, which takes into account the spatially homogeneous injection and the dependence of the dielectric constant on the charge carrier density, is discussed. The...

  • Epitaxially stacked lasers with Esaki junctions: A bipolar cascade laser. Garcia, J.Ch.; Rosencher, E. // Applied Physics Letters;12/29/1997, Vol. 71 Issue 26, p3752 

    Assesses the potential of Esaki tunnel junction in the fabrication of epitaxially stacked laser diodes. Comparison of tunnel junction types; Characteristics of the indium phosphide gallium system; Resistivity of Esaki tunnel junction to current.

  • Effects of stress on threshold, wavelength, and polarization of the output of InGaAsP semiconductor diode lasers. Adams, Charles S.; Cassidy, Daniel T. // Journal of Applied Physics;12/15/1988, Vol. 64 Issue 12, p6631 

    Presents information on a study which examined the effects of tension and compression applied to unbonded indium compound semiconductor diode lasers. Method of explaining the observed dependence of threshold, wavelength, and polarization of the laser output on the applied stress; Description of...

  • High-power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process. Garbuzov, D. Z.; Berishev, I. E.; Ilyin, Yu. V.; Ilyinskaya, N. D.; Ovchinnikov, A. V.; Pikhtin, N. A.; Tarasov, I. S. // Journal of Applied Physics;7/1/1992, Vol. 72 Issue 1, p319 

    Describes the preparation and performance of single lateral mode buried heterostucture indium-gallium-arsenic-phosphorus/indium-phosphorus laser diodes. Maximum continuous wave power in single lateral mode operation; Use of various wet chemical etchants; Efficiency of etching with an...

  • Wavelength dependence of T[sub 0] in InGaAsP semiconductor laser diodes. O'Gorman, J.; Levi, A.F.J. // Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2009 

    Examines the wavelength dependence of temperature in indium gallium arsenic phosphide semiconductor laser diodes. Measurement of temperature sensitivity in single mode laser threshold current; Relation between peak gain and temperature; Insensitivity of temperature dependence to lasing wavelength.

  • Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (1122) GaN substrate. Kojima, K.; Funato, M.; Kawakami, Y.; Masui, S.; Nagahama, S.; Mukai, T. // Applied Physics Letters;12/17/2007, Vol. 91 Issue 25, p251107 

    The stimulated emissions from semipolar InGaN laser diode (LD) structures grown on ([formula]) GaN substrates are observed at room temperature under photopumped conditions. The measured emission peaks are in the photon energy range from 2.62 eV (474 nm) to 3.05 eV (405 nm), and the emission...

  • Substrate-assisted laser patterning of indium tin oxide thin films. Yavas, O.; Ochiai, C.; Takai, M. // Applied Physics A: Materials Science & Processing;1999, Vol. 69 Issue 7, pS875 

    Abstract. Maskless laser patterning of indium tin oxide (ITO) thin films was studied by the use of a diode-pumped Q-switched Nd:YLF laser. The ITO films were sputter-deposited either on lime glass, the standard substrate material for flat panel display applications, or fused quartz so that the...

  • InGaN-based surface-emitting laser has a horizontal cavity.  // Laser Focus World;Jul2004, Vol. 40 Issue 7, p9 

    Reports on the development of surface-emitting indium gallium nitride (InGaN)-based blue-violet laser diode. Fabrication of a horizontal-cavity InGaN laser along with an angled mirror just beyond the end of the cavity; Use of dry etching and selective regrowth of magnesium-doped GaN layer;...

  • Influence of Gain Suppression on Static and Dynamic Characteristics of Laser Diodes under Digital Modulation. Mahmoud, Safwat W. Z. // Egyptian Journal of Solids;2007, Vol. 30 Issue 2, p237 

    This paper presents theoretical investigation of the influence of gain suppression on dynamic characteristics of InGaAsP laser diodes under digital modulation. The study is based on numerical solution of the laser rate equations in which the bias current is augmented by a digital signal with...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics