Effects of band mixing on hole tunneling times in GaAs/AlAs double-barrier heterostructures

Erdogan, M.U.; Kim, K.W.; Stroscio, M.A.
March 1993
Applied Physics Letters;3/22/1993, Vol. 62 Issue 12, p1423
Academic Journal
Calculates tunneling time holes in GaAs/AlAs heterostructures within envelope function approximation including band-mixing effects. Observation of phase delay time from phase shift of wave function; Importance of mixing in hole tunneling; Disadvantage of conventional effective mass models in tunneling time estimation.


Related Articles

  • Photon-assisted tunneling in double-barrier superconducting tunnel junctions. Dierichs, M.M.Th.M.; Dieleman, P. // Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p921 

    Examines the use of double-barrier superconducting tunnel junctions as mixing elements in a waveguide mixer. Determination of noise temperatures; Composite barrier as a single barrier for photon-assisted tunneling; Capacitance of two stacked tunnel barriers.

  • The kinetics of intermixing of GaAs/AlGaAs quantum confined heterostructures. Helmy, A. Saher; Aitchison, J.S. // Applied Physics Letters;11/17/1997, Vol. 71 Issue 20, p2998 

    Presents an atomic-scale model for the kinetics of intermixing of gallium arsenide/aluminum gallium arsenide quantum confined heterostructures. Quantification of effects of gallium/aluminum interdiffusion defects on the structure; Physical assumptions used as basis of the model; Validation of...

  • Influence of Josephson currents on superconductor-insulator-superconductor mixer performance. Jablonski, Daniel G.; Henneberger, Mark W. // Journal of Applied Physics;11/15/1985, Vol. 58 Issue 10, p3814 

    Presents a study which examined the effects of Josephson tunneling on the performance of superconductor-insulator-superconductor (SIS) mixers using an electronic simulator. Theoretical analysis of SIS mixer; Simulation of an SIS mixer in the absence of Josephson currents; Conclusions.

  • Observation of resonant tunneling through GaAs quantum well states confined by AlAs X-point barriers. Bonnefoi, A. R.; McGill, T. C.; Burnham, R. D.; Anderson, G. B. // Applied Physics Letters;2/9/1987, Vol. 50 Issue 6, p344 

    Experimental evidence of resonant tunneling via quasistationary states confined by AlAs X-point potential energy barriers is reported in GaAs/AlAs double barrier heterostructures grown in the [100] direction. The quantum well energy levels giving rise to the negative differential resistances...

  • Resonant tunneling via X-point states in AlAs-GaAs-AlAs heterostructures. Mendez, E. E.; Wang, W. I.; Calleja, E.; Gonçalves da Silva, C. E. T. // Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1263 

    We have observed resonant tunneling of electrons in AlAs-GaAs-AlAs heterostructures, via a quantum state localized in AlAs. The resonance manifests itself as a distinct feature in the current-voltage characteristics, at 4 K. The confined energy state arises from a potential profile derived from...

  • Inelastic tunneling in (111) oriented AlAs/GaAs/AlAs double-barrier heterostructures. Luo, L. F.; Beresford, R.; Wang, W. I.; Mendez, E. E. // Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2133 

    AlAs/GaAs/AlAs double-barrier heterostructures grown along the (111) crystal axis show a factor of two improvement in the peak-to-valley ratio compared to samples grown in the (100) orientation. A structure consisting of 2.8 nm barriers and an 8 nm well shows a peak-to-valley ratio much better...

  • Tunneling in semiconductor heterostructures studied by subpicosecond four-wave mixing. Leo, Karl; Shah, Jagdeep; Göbel, Ernst O.; Damen, Theo C.; Köhler, Klaus; Ganser, Peter // Applied Physics Letters;5/14/1990, Vol. 56 Issue 20, p2031 

    We apply time-resolved four-wave mixing as a novel tool to study resonant tunneling of carriers in semiconductor heterostructures. The polarization decay of excitons in a quantum well is much faster when the alignment of the electron levels in adjacent wells leads to resonant tunneling and...

  • One-dimensional to one-dimensional tunneling between electron waveguides. Eugster, C.C.; del Alamo, J.A.; Rooks, M.J.; Melloch, M.R. // Applied Physics Letters;6/6/1994, Vol. 64 Issue 23, p3157 

    Analyzes the electron tunneling between two spaced one-dimensional electron waveguides on high mobility AlGaAs/GaAs heterostructure using the split-gate scheme. Observation of distinct bumpy pattern; Modulation of electronic subband population in two waveguides; Occurrence of tunneling in one...

  • Observation of intrinsic tristability in a resonant tunneling structure. Martin, A.D.; Lerch, M.L.F.; Simmonds, P.E.; Eaves, L. // Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1248 

    Demonstrates the intrinsic bistability in a semiconductor asymmetric double-barrier structure (DBS) obtained in the region of a tunneling resonance. Use of a voltage supply; Factors contributng to the electrical characteristics of DBS; Components of the active region.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics