TITLE

Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs

AUTHOR(S)
Matragrano, M.J.; Watson, G.P.; Ast, D.G.; Anderson, T.J.; Pathangey, B.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/22/1993, Vol. 62 Issue 12, p1417
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines hydrogen passivation in InGaAs/GaAs heterostructures using deep level transient spectroscopy and cathodoluminescence. Presence of hydrogen plasma passivation; Stability of passivation after annealing at high temperature; Non-passivation below the detection limit.
ACCESSION #
4337936

 

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