Sub-50 nm high aspect-ratio silicon pillars, ridges, and trenches fabricated using ultrahigh

Fischer, P.B.; Chou, S.Y.
March 1993
Applied Physics Letters;3/22/1993, Vol. 62 Issue 12, p1414
Academic Journal
Examines the fabrication of sub-50 nm silicon (Si) pillars, ridges, and trenches using ultrahigh resolution electron beam lithography and reactive ion etching (RIE). Observation of light emissions on Si nanostructures by photoluminescence (PL); Reduction of RIE nanoscale structures by wet HF etching; Absence of PL from arrays of 10 nm Si structures.


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