Strained-layer InGaAs/GaInAsP/GaInP quantum well lasers grown by gas-source molecular beam epitaxy

Zhang, G.
March 1993
Applied Physics Letters;3/22/1993, Vol. 62 Issue 12, p1405
Academic Journal
Demonstrates the first strained-layer InGaAs/GaInAsP/GaInP well lasers grown by gas-source molecular beam epitaxy. Composition of InGaAs and GaInAsP; Analysis of the photoluminescence from quantum wells prior to laser processing; Determination of the internal quantum efficiency and internal waveguide loss.


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