TITLE

On the lack of correlation between film properties and solar cell performance of amorphous

AUTHOR(S)
Xu, X.; Yang, J.; Guha, S.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/22/1993, Vol. 62 Issue 12, p1399
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the performance of amorphous silicon-germanium alloy single-junction solar cells before and after light soaking. Use of photothermal deflection spectroscopy in measuring subband gap absorption; Measurement of absorption values; Impact of light soaking on subband defect density.
ACCESSION #
4337929

 

Related Articles

  • Alloy propelled. Pierce, Julia // Engineer (00137758);11/22/2002, Vol. 291 Issue 7616, p13 

    Reports that a team from the Materials Sciences Division of California's Lawrence Berkeley University, working with crystal-growing teams at Cornell University and Japan's Ritsumeikan University, has accidentally discovered a way to produce super-efficient, rugged and relatively inexpensive...

  • Enhancement of open circuit voltage in high efficiency amorphous silicon alloy solar cells. Guha, S.; Yang, J.; Nath, P.; Hack, M. // Applied Physics Letters;7/28/1986, Vol. 49 Issue 4, p218 

    We have developed a microcrystalline fluorinated p+ silicon alloy which has high dark conductivity and low optical loss. Incorporation of this material in single and tandem amorphous silicon alloy based solar cells has resulted in increased open circuit voltage and conversion efficiency.

  • Carrier collection losses in amorphous silicon and amorphous silicon-germanium alloy solar cells. Banerjee, A.; Xu, X. // Applied Physics Letters;11/13/1995, Vol. 67 Issue 20, p2975 

    Investigates the carrier collection losses in amorphous silicon and amorphous silicon-germanium alloy solar cells by measuring the biased quantum efficiency. Identification of losses near the p/i junction and the bulk of the i layer; Dependence of the extent of the losses on the quality of i...

  • Band edge discontinuities between microcrystalline and amorphous hydrogenated silicon alloys and.... Xu, X.; Yang, J. // Applied Physics Letters;10/16/1995, Vol. 67 Issue 16, p2323 

    Investigates the band edge discontinuities between microcrystalline and amorphous hydrogenated silicon alloys. Calculation of the band gap of microcrystalline hydrogenated silicon; Derivation of the discontinuities at the conduction and the valence band edges; Examination of the effect of the...

  • Double-junction amorphous silicon-based solar cells with 11% stable efficiency. Yang, J.; Guha, S. // Applied Physics Letters;12/14/1992, Vol. 61 Issue 24, p2917 

    Examines the performance of dual-band gap double-junction amorphous silicon alloy-based solar cells with stable efficiency. Analysis on different degrees of current mismatch of component cells under annealed and light-soaked conditions; Achievement of a stabilized active-area efficiency;...

  • Interdependence of absorber composition and recombination mechanism in Cu(In,Ga)(Se,S)[sub 2] heterojunction solar cells. Turcu, M.; Pakma, O.; Rau, U. // Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2598 

    Temperature-dependent current-voltage measurements are used to determine the dominant recombination path in thin-film heterojunction solar cells based on a variety of Cu(In,Ga)(Se,S)[sub 2] alloys. The activation energy of recombination follows the band gap energy of the respective...

  • Materials progress: Materials science/R&D.  // Advanced Materials & Processes;Aug97, Vol. 152 Issue 2, p17 

    Provides information on the amorphous silicon-based solar cells, ultrafine grained steel and the performance of iron aluminides to carburization. Thinner sheets of amorphous silicon layers on solar panels; Improvements in the performance of ultrafine grained steel; Results of a test on B2-phase...

  • Influence of stress on light-induced effects in amorphous silicon alloys. Guha, S.; den Boer, W.; Agarwal, S. C.; Hack, M. // Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p947 

    We have studied the effect of stress on light-induced changes in photoconductivity and solar cell performance of amorphous silicon alloys. We find no correlation between degradation and stress in the material.

  • Limitations to the open circuit voltage of amorphous silicon solar cells. Hack, M.; Shur, M. // Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1432 

    In this paper, we investigate the open circuit voltage of amorphous silicon alloy p-i-n and n-i-p solar cells and show that the low open circuit voltage of some devices can be caused by a built-in potential smaller than normal arising from a low band-gap p+ layer. For these solar cells, in good...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics