Photoluminescence excitation spectroscopy on intermixed GaAs/AlGaAs quantum wires

Prins, F.E.; Lehr, G.; Burkard, M.; Schweizer, H.; Pilkuhn, M.H.; Smith, G.W.
March 1993
Applied Physics Letters;3/22/1993, Vol. 62 Issue 12, p1365
Academic Journal
Presents the photoluminescence excitation spectroscopy of intermixed gallium arsenide/aluminum gallium arsenide quantum wires. Occurrence of a steep lateral potential in the wire region; Relationship between wire width and Stokes shift; Importance of fluctuation in wire dimensions.


Related Articles

  • Lateral quantization induced emission energy shift of buried GaAs/AlGaAs quantum wires. Maile, B. E.; Forchel, A.; Germann, R.; Straka, J.; Korte, L.; Thanner, C. // Applied Physics Letters;8/20/1990, Vol. 57 Issue 8, p807 

    Buried GaAs/AlGaAs quantum wires were prepared by Al0.2Ga0.8As overgrowth of deep etched wires defined by high-resolution electron beam lithography and dry etching. The overgrown wires show a dramatic decrease of the optically inactive sidewall layer compared to open wires. For wires with a...

  • Observation of exciton states in GaAs coupled quantum wires on a V-grooved substrate. Komori, Kazuhiro; Xue-Lun Wang // Applied Physics Letters;12/8/1997, Vol. 71 Issue 23, p3350 

    Investigates the exciton states of gallium arsenide coupled quantum wires by photoluminescence excitation (PLE) measurements. Detection of quantum wire spectra in PLE; Observation of exciton peaks in coupled quantum wires; Effects of Stokes shift on quantum wire.

  • Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs. Ahopelto, J.; Sopanen, M. // Applied Physics Letters;5/26/1997, Vol. 70 Issue 21, p2828 

    Demonstrates the fabrication process creating InGaAs/InP quantum wires on gallium arsenide substrates. Basis of the fabrication process; Observation of intense photoluminescence from the wires and emission; Confirmation of luminescence origin by the cathodoluminescence images.

  • High spatial resolution spectroscopy of a single V-shaped quantum wire. Bellessa, J.; Voliotis, V. // Applied Physics Letters;10/27/1997, Vol. 71 Issue 17, p2481 

    Examines the microscopic photoluminescence of a single V-shaped aluminum gallium arsenide/gallium arsenide quantum wire. Excitation of the samples at low temperatures; Characteristics of the main photoluminescence line; Reason for the predominance of the localization phenomena.

  • Optical characterization of the self-limiting effect in flow-rate modulation epitaxy of V-shaped... Xue-Lun Wang; Mutsuo, Ogura // Applied Physics Letters;12/27/1999, Vol. 75 Issue 26, p4148 

    Applies photoluminescence to characterize the self-limiting effect observed during flow-rate modulation epitaxy (FME) of gallium arsenide (GaAs) quantum wires (QWR) on V-grooved substrate. Maintenance of central thickness and overall cross-sectional wire shape to an atomic level; Potential of...

  • Photoluminescence properties of 13x13 nm GaAs quantum wires buried in trench structures reduced.... Sogawa, T.; Ando, S. // Applied Physics Letters;8/21/1995, Vol. 67 Issue 8, p1087 

    Examines the photoluminescence (PL) properties of gallium arsenide quantum wires through chemical vapor deposition. Determination of PL polarization anisotropy; Mechanism for eliminating undesired emission levels of the quantum wires; Factors affecting PL properties.

  • Large excited state Stokes shift in crescent-shaped AlGaAs/GaAs quantum wires. Xue-Lun Wang; Ogura, Matsuo // Applied Physics Letters;10/13/1997, Vol. 71 Issue 15, p2130 

    Investigates the Stokes shifts of the ground and excited states in aluminum gallium arsenide/gallium arsenide quantum wire. Use of photoluminescence (PL) and PL excitation spectroscopy; Effect of spatially separated wave function distribution; Calculation for the electronic state of the quantum...

  • Surround-gated vertical nanowire quantum dots. van Weert, M. H. M.; den Heijer, M.; van Kouwen, M. P.; Algra, R. E.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.; Zwiller, V. // Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p233112 

    We report voltage dependent photoluminescence experiments on single indium arsenide phosphide (InAsP) quantum dots embedded in vertical surround-gated indium phosphide (InP) nanowires. We show that by tuning the gate voltage, we can access different quantum dot charge states. We study the...

  • Two-dimensional quantum-confined Stark effect V-groove quantum wires: Excited state spectroscopy... Weman, H.; Martinet, E.; Dupertuis, M.-A.; Rudra, A.; Leifer, K.; Kapon, E. // Applied Physics Letters;4/19/1999, Vol. 74 Issue 16, p2334 

    Reports on the electric field effects on photoluminescence (PL) and PL excitation (PLE) measurements of reverse-biased gallium arsenide (GaAs) V-groove quantum wires. Observation of large redshifts of PL and PLE peaks; Field dependent intensity and polarization anisotropy variations.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics