TITLE

Electromigration failure due to interfacial diffusion in fine Al alloy lines

AUTHOR(S)
Hu, C.-K.; Small, M.B.; Rodbell, K.P.; Stanis, C.; Blauner, P.; Ho, P.S.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p1023
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the electromigration failure in fine aluminum alloy lines. Comparison between the interfacial mass transport along the edge of alloy lines and grain boundaries; Demonstration of the failure mechanism with bamboo grain structures.
ACCESSION #
4337896

 

Related Articles

  • Electromigration damage and failure distributions in Al-4 wt% Cu interconnects. Shih, W.C.; Greer, A.L. // Journal of Applied Physics;9/1/1998, Vol. 84 Issue 5, p2551 

    Presents a study of electromigration damage and failure distributions of aluminum-copper interconnects. Random distribution of the hillocks; Evolution of void distributions; Utilization of statistics to characterize damage and failure distributions.

  • On the dispersion of electromigration failure times of Al alloy contacts to silicon. Oates, A.S. // Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2870 

    Examines the electromigration failure times of aluminum alloy contacts to silicon. Relevance of electromigration failure data to circuit operating conditions; Dependence of the dispersion of failure times on temperature; Results of electromigration stressing of the contact structures.

  • Application of the Avrami rate equation to electromigration damage in Al–1%Si interconnections. Patrinos, A. J.; Vankar, V. D.; Schwarz, J. A. // Journal of Applied Physics;6/15/1988, Vol. 63 Issue 12, p5733 

    Focuses on a study which analyzed the electromigration failures in aluminum and aluminum-alloy using the Avrami rate expression. Details of the methodology; Discussion on findings; Implications of the study.

  • Electromigration in two-level interconnect structures with Al alloy lines and W studs. Hu, C-K.; Ho, P. S.; Small, M. B. // Journal of Applied Physics;7/1/1992, Vol. 72 Issue 1, p291 

    Investigates an aluminum (Al) copper (Cu) with tungsten interface using drift velocity and resistometric techniques. Measurement of the degradation of the aluminum alloy; Equation of the electromigration fluxes for Cu and Al; Modelling of the observed mass transport in Al(Cu).

  • 1/f noise as an early indicator of electromigration damage in thin metal films. Dagge, K.; Frank, W. // Applied Physics Letters;2/26/1996, Vol. 68 Issue 9, p1198 

    Investigates electromigration in thin films of aluminum and aluminum alloys. Consideration of the electrical 1/frequency noise as an early indication of electromigration damage; Factors attributed to failure of very-large-scale-integration electronic devices; Employment of a phase-sensitive...

  • Grain size dependence of electromigration-induced failures in narrow interconnects. Cho, J.; Thompson, C. V. // Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2577 

    Measurements of the median time to failure (MTTF) and deviation in the time to electromigration-induced failure (DTTF) of Al alloy thin-film lines are reported. As the ratio of the linewidth to the grain size decreases, MTTF decreases to a minimum and then increases exponentially. DTTF...

  • Atomistic simulation of self-diffusion in Al and Al alloys under electromigration conditions. Sen, F. G.; Aydinol, M. K. // Journal of Applied Physics;Oct2008, Vol. 104 Issue 7, p073510 

    The effect of alloying elements on the self-diffusion behavior of Al under electromigration conditions was investigated using nonequilibrium molecular dynamics. The corresponding defect structures were also characterized energetically by Mott–Littleton approach. Pd, Cu, Mn, and Sn were...

  • Grain growth in Al alloy conductors as a result of rapid annealing. Towner, Janet M.; van de Ven, Evert P.; Hopkins, Craig G. // Applied Physics Letters;1984, Vol. 44 Issue 2, p198 

    Aluminum and aluminum alloy thin films were rapidly annealed using high intensity visible light. Under suitable conditions, substantial grain growth was achieved in the Al-Cu and Al-Si-Cu conductors and this grain growth had a beneficial effect on electromigration. Unfortunately, this growth did...

  • Aluminum dross recycle.  // Popular Mechanics;Jun97, Vol. 174 Issue 6, p28 

    Discusses the way of making aluminum dross, the scum that forms on top of molten metal into a marketable products. How the dross can be made into a metals; Manufacturers that can profit on the process.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics