Critical dislocation density separating different regimes of diffusion transport in

Vaisleib, A.V.
March 1993
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p1012
Academic Journal
Examines the critical dislocation density separating different regimes of diffusion transport in metal-semiconductor systems. Shift of interstitial impurity regime to self-interstitial or vacancy regime; Concept of critical magnitudes of the dislocation density; Correlation between critical dislocation density and temperature.


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