TITLE

Critical dislocation density separating different regimes of diffusion transport in

AUTHOR(S)
Vaisleib, A.V.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p1012
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the critical dislocation density separating different regimes of diffusion transport in metal-semiconductor systems. Shift of interstitial impurity regime to self-interstitial or vacancy regime; Concept of critical magnitudes of the dislocation density; Correlation between critical dislocation density and temperature.
ACCESSION #
4337892

 

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