TITLE

Passivation of the InP surface using polysulfide and silicon nitride overlayer

AUTHOR(S)
Kapila, A.; Malhotra, V.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p1009
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the passivation of indium phosphide (InP) surface using polysulfide and silicon nitride overlayer. Analysis on the doubled photoluminescence intensity of passivated InP; Estimation of the interface trap density using high-low capacitance technique; Deposition of overlayers at 200 degree Celsius.
ACCESSION #
4337891

 

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