Passivation of the InP surface using polysulfide and silicon nitride overlayer

Kapila, A.; Malhotra, V.
March 1993
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p1009
Academic Journal
Examines the passivation of indium phosphide (InP) surface using polysulfide and silicon nitride overlayer. Analysis on the doubled photoluminescence intensity of passivated InP; Estimation of the interface trap density using high-low capacitance technique; Deposition of overlayers at 200 degree Celsius.


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