TITLE

Al[sub x]Ga[sub 1-x]As/Al[sub y]Ga[sub 1-y]As and GaAs pseudo-heterojunction bipolar transistors

AUTHOR(S)
Gao, G.B.; Fan, Z.F.; Teraguchi, N.; Shen, T.C.; Morko, H.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p994
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the operation of Al[sub x]Ga[sub 1-x]As/Al[sub y]Ga[sub 1-y]As and GaAs pseudo-heterojunction bipolar transistors (HBT) with lateral emitter resistor. Measurement of the base current ideality factors, current gains and densities of HBT; Effect of emitter resistor on surface recombination.
ACCESSION #
4337886

 

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