Low-temperature (490 degree C)GaAs epitaxial growth on (100)Si by molecular beam epitaxy

Chiang, T.Y.; Yiin, D.H.; Liu, E.H.; Yew, T.R.
March 1993
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p985
Academic Journal
Examines the low-temperature epitaxial growth of gallium arsenide on (100) silicon (Si) by molecular beam epitaxy. Application of spin-etch technique to clean the Si wafers; Techniques used to characterize the epitaxial films; Elimination of the oxide desorption step for pre-epitaxial substrate preparation.


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