Chemical, structural, and electronic properties of sulfur-passivated InP(001) (2x1) surfaces

Gallet, D.; Hollinger, G.
March 1993
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p982
Academic Journal
Examines the chemical, structural and electronic properties of (NH[sub 4])[sub 2]S[sub x]-treated indium phosphide (001) surfaces. Observation on the (2x1) surface reconstruction of substrates; Factors attributing the formation of InP[sub 1-x]S[sub x] pseudomorphic overlayer; Association between sulfur surface concentration and annealing temperature.


Related Articles

  • Effect of charge carriers on the barrier height for vacancy formation on InP(110) surfaces. Semmler, U.; Ebert, Ph.; Urban, K. // Applied Physics Letters;7/3/2000, Vol. 77 Issue 1 

    We determine the energy barrier height for the formation of positively charged phosphorus vacancies in InP(110) surfaces using the rate of formation of vacancies measured directly from scanning tunneling microscope images. We found a barrier height in the range of 1.15-1.21 eV. The barrier...

  • S-passivated InP (100)-(1X1) surface prepared by a wet chemical process. Tao, Y.; Yelon, A.; Sacher, E.; Lu, Z.H.; Graham, M.J. // Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2669 

    Examines the achievement of a stable crystalline sulfur-passivated indium phosphide(100) surface. Exhibition of the (1 by 1) diffraction pattern; Termination of the surface with a monolayer of sulfur; Formation of the bridge bonds to indium.

  • Be incorporation and surface morphologies in homoepitaxial InP films. Cotta, M.A.; de Carvalho, M.M.G. // Applied Physics Letters;8/21/1995, Vol. 67 Issue 8, p1122 

    Examines the incorporation and surface morphologies of beryllium (Be) in homoepitaxial indium phosphide thin films. Calculation of Be concentration in the films; Factors attributing to the growth of oval defects; Application of Be to ultrahigh vacuum systems.

  • Influence of surface morphology on ordered GainP structures. Nasi, L.; Salviati, G.; Mazzer, M.; Zanotti-Fregonara, C. // Applied Physics Letters;6/3/1996, Vol. 68 Issue 23, p3263 

    Investigates the influence of surface morphology on the distribution of ordered domains in GaInP layers. Increase in structural homogeneity of ordered domains; Correlation between cathodoluminescence emission from ordered regions; Changes in surface step distribution direction.

  • Reduced phosphorus loss from InP surface during hydrogen plasma treatment. Balasubramanian, Sathya; Kumar, Vikram // Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1696 

    Proposes a method for reducing phosphorus (P) loss from the indium phosphide (InP) surface during hydrogen (H) plasma treatment. Suppression of P loss using a sacrificial InP wafer; Reduction of P vacancy related transitions; Use of InP wafer in providing a P overpressure during H plasma treatment.

  • Observation of the InP surface thermally cleaned in an arsenic flux using a scanning tunneling.... Ohkouchi, Shunsuke; Tanaka, Ichiro // Applied Physics Letters;9/23/1991, Vol. 59 Issue 13, p1588 

    Examines an indium phosphide surface thermally cleaned in an arsenic flux using a multi-chamber ultrahigh vacuum scanning tunneling microscope system equipped with a molecular beam epitaxy facility. Width of period lines observed in the [110] direction; Comparison of results with reflection...

  • Structure of S-passivated InP(100)-(1X1) surface. Lu, Z.H.; Graham, M.J. // Applied Physics Letters;6/1/1992, Vol. 60 Issue 22, p2773 

    Determines the structure of the sulfur (S)-passivated indium phosphide (InP)(100)-(1X1) surface using x-ray absorption near-edge structure (XANES). Employment of photon electric polarization-dependent XANES analysis; Description of the formed bridge bond; Proximity of the S atomic position.

  • Indium Phosphide ICs Complement CMOS. Raghavan, Gopal // Siliconindia;Jun2003, Vol. 7 Issue 5, p38 

    Discusses the use of indium phosphide in high-speed optoelectronic applications. Characteristics of indium phosphide; Difference from other semiconductors; Other applications of indium phosphide.

  • Metal reactivity effects on the surface recombination velocity at InP interfaces. Rosenwaks, Y.; Shapira, Yoram; Huppert, D. // Applied Physics Letters;12/10/1990, Vol. 57 Issue 24, p2552 

    Direct measurements of the surface recombination velocity (SRV) on etched InP(110) and at its interfaces with various metals deposited by thermal evaporation have been performed using ultrafast time-resolved photoluminescence. The results show that the original InP low SRV is retained when these...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics