Planar p-on-n HgCdTe heterostructure photovoltaic detectors

Arias, J.M.; Pasko, J.G.; Zandian, M.; Shin, S.H.; Williams, G.M.; Bubulac, L.O.; DeWames, R.E.; Tennant, W.E.
March 1993
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p976
Academic Journal
Examines the fabrication of planar p-on-n HgCdTe heterostructure photodiodes. Growth of materials by molecular beam epitaxy; Formation of planar junctions by selective pocket diffusion of arsenic ions; Analysis on the current-voltage characteristics of the photodetectors.


Related Articles

  • Solar-blind AlGaN-based inverted heterostructure photodiodes. Tarsa, E. J.; Tarsa, E.J.; Kozodoy, P.; Ibbetson, J.; Keller, B.P.; Keller, B. P.; Parish, G.; Mishra, U. // Applied Physics Letters;7/17/2000, Vol. 77 Issue 3 

    True solar-blind operation with a sharp responsivity cutoff at ∼300 nm has been demonstrated in AlGaN-based photodiodes using an "inverted heterostructure photodiode" design. This structure utilizes an Al[sub x]Ga[sub 1-x]N(x>0.3) intrinsic or lightly doped active layer surrounded by p-...

  • Planar p-on-n HgCdTe heterostructure infrared photodiodes. Bahir, G.; Garber, V.; Rosenfeld, D. // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1331 

    We report on a simple process to fabricate planar Hg[sub 1-y]Cd[sub y]Te/Hg[sub 1-x]Cd[sub x]Te (x

  • X-ray response of AlGaAs/GaAs radiation-hardened double-heterostructure photodiode compared to Si:p-i-n photodiodes. Anthes, J. P. // Review of Scientific Instruments;Aug1988, Vol. 59 Issue 8, p1846 

    Requirements for continuous operation of photodiodes in the presence of nuclear radiation has led to the development ora novel AlGaAs/GaAs photodiode. Device structure and semiconductor properties of this design were optimized to balance the need for photodetection at λ = 820 nm against...

  • Infrared photoconductor fabricated with a molecular beam epitaxially grown CdTe/HgCdTe... Yuan, Shixin; He, Li; Yu, Jinbi; Yu, Meifang; Qiao, Yiming; Zhu, Jianmei // Applied Physics Letters;3/4/1991, Vol. 58 Issue 9, p914 

    Describes infrared photoconductors fabricated with cadmium tellurium/mercury[sub 0.64] cadmium[sub 0.36] tellurium abrupt heterostructure grown on a gallium arsenide substrate. Description of the growth procedure, device fabrication, and measurement results; Reduction in interface states and...

  • Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures. Andreev, I. A.; Kunitsyna, E. V.; Lantratov, V. M.; L’vova, T. V.; Mikhaılova, M. P.; Yakovlev, Yu. P. // Semiconductors;Jun97, Vol. 31 Issue 6, p556 

    Gallium antimonide and its solid solutions are widely used to create optoelectronic devices for the spectral range 2-5 µm. However, the high chemical activity of their surfaces leads to a high growth rate of the native oxide and to degradation of the characteristics of devices based on these...

  • Ultraviolet light selective photodiode based on an organic–inorganic heterostructure. Yamaura, J.; Muraoka, Y.; Yamauchi, T.; Muramatsu, T.; Hiroi, Z. // Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2097 

    We show a perfect ultraviolet (UV) light selective and sensitive photovoltaic cell easily fabricated. The device consists of a water-soluble p-type semiconducting polymer PEDOT-PSS: poly(3,4-ethylenedioxythiophene) doped by poly(4-styrenesulfonate) film deposited on a Nb-doped titanium oxide...

  • Photodiode properties of epitaxial Pb(Ti, Zr)O[sub 3]/SrTiO[sub 3] ferroelectric heterostructures. Watanabe, Yukio; Okano, Motochika // Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1906 

    A substantial photovoltaic effect is found in heterostructures of typical ferroelectric oxides. Pb(Ti, Zr)O[sub 3]/Nb-doped SrTiO[sub 3], especially, exhibits current-voltage characteristics of the photovoltaic effect of a typical pn junction (p: hole carrier type, n: electron carrier type). A...

  • Improving parameters of GaSb/GaInAsSb/AlGaAsSb photodiode structures with thin active regions for the 1.0–2.5 μm wavelength range. Astakhova, A. P.; Zhurtanov, B. E.; Imenkov, A. N.; Mikhailova, M. P.; Sipovskaya, M. A.; Stoyanov, N. D.; Yakovlev, Yu. P. // Technical Physics Letters;Oct2007, Vol. 33 Issue 10, p809 

    We have studied and optimized the properties of photodiodes with a red photosensitivity threshold at 2.5 μm, which have been created on the basis of GaSb/GaInAsSb/AlGaAsSb heterostructures with Ga0.76In0.24As0.22Sb0.78 active regions of variable thickness and a reflecting contact on the rear...

  • High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-�m Spectral Range with a Large-Diameter Active Area. Andreev, I.A.; Il'inskaya, N.D.; Kunitsyna, E.V.; Mikha&icaron;lova, M.P.; Yakovlev, Yu.P. // Semiconductors;Aug2003, Vol. 37 Issue 8, p949 

    The results of a study aimed at the fabrication of high-sensitivity photodiodes for the 0.9- to 2.55-�m spectral range with a photosensitive area diameter as large as 1�3 mm are presented. A large range of photodiodes based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics