TITLE

Planar p-on-n HgCdTe heterostructure photovoltaic detectors

AUTHOR(S)
Arias, J.M.; Pasko, J.G.; Zandian, M.; Shin, S.H.; Williams, G.M.; Bubulac, L.O.; DeWames, R.E.; Tennant, W.E.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p976
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the fabrication of planar p-on-n HgCdTe heterostructure photodiodes. Growth of materials by molecular beam epitaxy; Formation of planar junctions by selective pocket diffusion of arsenic ions; Analysis on the current-voltage characteristics of the photodetectors.
ACCESSION #
4337880

 

Related Articles

  • Solar-blind AlGaN-based inverted heterostructure photodiodes. Tarsa, E. J.; Tarsa, E.J.; Kozodoy, P.; Ibbetson, J.; Keller, B.P.; Keller, B. P.; Parish, G.; Mishra, U. // Applied Physics Letters;7/17/2000, Vol. 77 Issue 3 

    True solar-blind operation with a sharp responsivity cutoff at ∼300 nm has been demonstrated in AlGaN-based photodiodes using an "inverted heterostructure photodiode" design. This structure utilizes an Al[sub x]Ga[sub 1-x]N(x>0.3) intrinsic or lightly doped active layer surrounded by p-...

  • Planar p-on-n HgCdTe heterostructure infrared photodiodes. Bahir, G.; Garber, V.; Rosenfeld, D. // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1331 

    We report on a simple process to fabricate planar Hg[sub 1-y]Cd[sub y]Te/Hg[sub 1-x]Cd[sub x]Te (x

  • X-ray response of AlGaAs/GaAs radiation-hardened double-heterostructure photodiode compared to Si:p-i-n photodiodes. Anthes, J. P. // Review of Scientific Instruments;Aug1988, Vol. 59 Issue 8, p1846 

    Requirements for continuous operation of photodiodes in the presence of nuclear radiation has led to the development ora novel AlGaAs/GaAs photodiode. Device structure and semiconductor properties of this design were optimized to balance the need for photodetection at λ = 820 nm against...

  • Infrared photoconductor fabricated with a molecular beam epitaxially grown CdTe/HgCdTe... Yuan, Shixin; He, Li; Yu, Jinbi; Yu, Meifang; Qiao, Yiming; Zhu, Jianmei // Applied Physics Letters;3/4/1991, Vol. 58 Issue 9, p914 

    Describes infrared photoconductors fabricated with cadmium tellurium/mercury[sub 0.64] cadmium[sub 0.36] tellurium abrupt heterostructure grown on a gallium arsenide substrate. Description of the growth procedure, device fabrication, and measurement results; Reduction in interface states and...

  • Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures. Andreev, I. A.; Kunitsyna, E. V.; Lantratov, V. M.; L’vova, T. V.; Mikhaılova, M. P.; Yakovlev, Yu. P. // Semiconductors;Jun97, Vol. 31 Issue 6, p556 

    Gallium antimonide and its solid solutions are widely used to create optoelectronic devices for the spectral range 2-5 µm. However, the high chemical activity of their surfaces leads to a high growth rate of the native oxide and to degradation of the characteristics of devices based on these...

  • Ultraviolet light selective photodiode based on an organic–inorganic heterostructure. Yamaura, J.; Muraoka, Y.; Yamauchi, T.; Muramatsu, T.; Hiroi, Z. // Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2097 

    We show a perfect ultraviolet (UV) light selective and sensitive photovoltaic cell easily fabricated. The device consists of a water-soluble p-type semiconducting polymer PEDOT-PSS: poly(3,4-ethylenedioxythiophene) doped by poly(4-styrenesulfonate) film deposited on a Nb-doped titanium oxide...

  • Photodiode properties of epitaxial Pb(Ti, Zr)O[sub 3]/SrTiO[sub 3] ferroelectric heterostructures. Watanabe, Yukio; Okano, Motochika // Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1906 

    A substantial photovoltaic effect is found in heterostructures of typical ferroelectric oxides. Pb(Ti, Zr)O[sub 3]/Nb-doped SrTiO[sub 3], especially, exhibits current-voltage characteristics of the photovoltaic effect of a typical pn junction (p: hole carrier type, n: electron carrier type). A...

  • Improving parameters of GaSb/GaInAsSb/AlGaAsSb photodiode structures with thin active regions for the 1.0–2.5 μm wavelength range. Astakhova, A. P.; Zhurtanov, B. E.; Imenkov, A. N.; Mikhailova, M. P.; Sipovskaya, M. A.; Stoyanov, N. D.; Yakovlev, Yu. P. // Technical Physics Letters;Oct2007, Vol. 33 Issue 10, p809 

    We have studied and optimized the properties of photodiodes with a red photosensitivity threshold at 2.5 μm, which have been created on the basis of GaSb/GaInAsSb/AlGaAsSb heterostructures with Ga0.76In0.24As0.22Sb0.78 active regions of variable thickness and a reflecting contact on the rear...

  • High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-�m Spectral Range with a Large-Diameter Active Area. Andreev, I.A.; Il'inskaya, N.D.; Kunitsyna, E.V.; Mikha&icaron;lova, M.P.; Yakovlev, Yu.P. // Semiconductors;Aug2003, Vol. 37 Issue 8, p949 

    The results of a study aimed at the fabrication of high-sensitivity photodiodes for the 0.9- to 2.55-�m spectral range with a photosensitive area diameter as large as 1�3 mm are presented. A large range of photodiodes based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics