TITLE

Reliability characteristics of metal-oxide-semiconductor capacitors with chemical vapor

AUTHOR(S)
Lo, G.Q.; Kwong, D.L.; Lee, S.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p973
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Discusses the reliability characteristics of metal-oxide-semiconductor capacitors with chemical-vapor-deposited Ta[sub 2]O[sub 5] gate dielectric films. Enhancement of interface state generation with dielectric layers; Effect of hole-injection-barrier on the positive-charge build-up of capacitors.
ACCESSION #
4337879

 

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