TITLE

Denuded zone formation in carbon-implanted silicon and its application to device quality

AUTHOR(S)
Tong, Q.-Y.; You, H.-M.; Cha, G.; Gosele, U.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p970
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the formation of denuded zone in carbon-implanted silicon. Application of denuded zone to device quality silicon-on-insulator (SOI) preparation; Use of buried oxide in the SOI wafers; Diameter and layer thickness of the SOI wafers.
ACCESSION #
4337878

 

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