Denuded zone formation in carbon-implanted silicon and its application to device quality

Tong, Q.-Y.; You, H.-M.; Cha, G.; Gosele, U.
March 1993
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p970
Academic Journal
Examines the formation of denuded zone in carbon-implanted silicon. Application of denuded zone to device quality silicon-on-insulator (SOI) preparation; Use of buried oxide in the SOI wafers; Diameter and layer thickness of the SOI wafers.


Related Articles

  • Wafer costs slow SOI push. Kallender, Paul // South Carolina Business Journal;Nov2001, Vol. 20 Issue 10, p41 

    Reports the hindrances to the adoption of silicon-on-insulator (SIO) technology at companies. Defect problems in the separation by implanted oxygen wafers; Rate of semiconductor wafers; Incompatibility of the performance design of hardware logic to the network processor.

  • SOI wafers based on epitaxial technology. Sakaguchi, Kiyofumi; Yonehara, Takao // Solid State Technology;Jun2000, Vol. 43 Issue 6, p88 

    Focuses on the technology epitaxial silicon-on-insulator (SOI) wafer process known as Epitaxial Layer TRANsfer (ELTRAN). Process involved in the fabrication of epitaxial SOI wafers; Characteristics of the epitaxial SOI wafer over other SOI wafers; Cost reduction features of the technology;...

  • Strong, easy-to-manufacture, transition edge x-ray sensor. Tanaka, Keiichi; Morooka, Toshimitsu; Chinone, Kazuo; Ukibe, Masahiro; Hirayama, Fuminori; Ohkubo, Masataka; Koyanagi, Masao // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    We developed a membrane structure with a silicon-on-insulator (SOI) wafer by using a micromachining technique to create a transition edge x-ray sensor. In this membrane structure, the part of the SOI layer between the silicon nitride (SiN[sub x]) film and the buried oxide layer was etched from...

  • Electrical Conductivity of Silicon-on-Insulator Structures Prepared by Bonding Silicon Wafers to a Substrate Using Hydrogen Implantation. Antonova, I. V.; Stas�, V. F.; Popov, V. P.; Obodnikov, V. I.; Gutakovskii, A. K. // Semiconductors;Sep2000, Vol. 34 Issue 9, p1054 

    Silicon-on-insulator structures were prepared by exfoliating a thin layer from a silicon wafer owing to hydrogen implantation, transferring this layer to another substrate, and bonding to it. The influence of hydrogen and the doping level in the original wafers on the free-carrier concentration...

  • Residual lattice strain in thin silicon-on-insulator bonded wafers: Thermal behavior and... Iida, Tsutomu; Itoh, Takamasa // Journal of Applied Physics;1/15/2000, Vol. 87 Issue 2, p675 

    Presents information on a study which investigated the residual lattice strain in annealed bonded silicon-on-insulator wafers as a function of the temperature and duration of the heat treatment. Experimental details; Results and discussion.

  • Engineered substrates require strain metrology. Kennard, Mark; Tiberj, Antoine; Cayrefourcq, Ian; Celler, George; Mazuré, Carlos // Solid State Technology;Nov2004, Vol. 47 Issue 11, p53 

    Discusses the production of strained silicon-on-insulator (sSOI) wafers. Usability of layer transfer technique in obtaining tensile sSOI wafers; Approach in forming relaxed SiGe-layer-on-insulator; Significance of SiGe films in the production of the wafers.

  • Formation of silicon on insulator using separation by implantation of oxygen with water plasma. Chen, Jing; Wang, Xi; Chen, Meng; Zheng, Zhihong; Yu, Yuehui // Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p73 

    Separation by plasma implantation of oxygen (SPIMOX) was developed to fabricate silicon-on-insulator (SOI) wafers based on separation by implantation of oxygen technology, however, it suffers from the coexistence of O[sup +] and O[sub 2][sup +] ions in the oxygen plasma, which gives rise to...

  • SOI market with yet another technology.  // Solid State Technology;Jun2001, Vol. 44 Issue 6, p50 

    Focuses on the efforts of Canon to promote its alternative bonded-wafer technology using water jet cutters and hydrogen annealing. Cash flow generated by the company in 2000; Total revenues in 2000; Strategy of the company to expand its wafer-marketing business.

  • SOI Wafers Escape Niche. Dorsch, Jeff // Electronic News;10/12/98, Vol. 44 Issue 2240, p6 

    Reports on improvements in the silicon-on-insulator (SOI) wafer market in the United States. IBM's unveiling of plans to use SOI technology to achieve chips operating at 1GHz; Silicon Genesis' acquisition of Waban Technology Inc. to develop ion implant equipment for doping semiconductor wafers...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics