TITLE

Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs quantum

AUTHOR(S)
Zhang, G.; Ovtchinnikov, A.; Pessa, M.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p967
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth temperature of indium gallium arsenide/gallium arsenide quantum well lasers by gas-source molecular beam epitaxy. Effect of growth temperature on threshold current density; Origin of the recombination centers; Improvement of photoluminescence intensity of the quantum wells.
ACCESSION #
4337876

 

Related Articles

  • Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy. Williams, R.L.; Dion, M.; Chatenoud, F.; Dzurko, K. // Applied Physics Letters;4/29/1991, Vol. 58 Issue 17, p1816 

    Studies the growth of extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy. Threshold current density; Internal quantum efficiency for the lasers.

  • Strained-layer InGaAs/GaInAsP/GaInP quantum well lasers grown by gas-source molecular beam epitaxy. Zhang, G. // Applied Physics Letters;3/22/1993, Vol. 62 Issue 12, p1405 

    Demonstrates the first strained-layer InGaAs/GaInAsP/GaInP well lasers grown by gas-source molecular beam epitaxy. Composition of InGaAs and GaInAsP; Analysis of the photoluminescence from quantum wells prior to laser processing; Determination of the internal quantum efficiency and internal...

  • Monolithic integration of GaAs and In[sub 0.2]Ga[sub 0.8]As lasers by molecular bearm epitaxy on... Berger, P.R.; Dutta, N.K.; Lopata, J.; Chu, S.N.G.; Chand, Naresh // Applied Physics Letters;6/10/1991, Vol. 58 Issue 23, p2698 

    Studies monolithic integration of GaAs and In[sub 0.2]Ga[sub 0.8]As lasers by molecular beam epitaxy on GaAs. Protection of GaAs laser stripes during regrowth under a dielectric mask over which polycrystalline material grew; Characteristics of the lasers; Threshold currents.

  • Researchers grow a lateral-junction VCSEL. Noaker, Paula M. // Laser Focus World;Aug99, Vol. 35 Issue 8, p58 

    Reports on the use of molecular-beam epitaxy to grow a lateral junction vertical-cavity surface-emitting laser (VCSEL) to solve the problem on excess energy in carriers. How researchers at the Adaptive Communications Laboratories at the Advance Research Instituted developed the solution; Active...

  • Gas-source molecular beam epitaxy growth of an 8.5 mum quantum cascade laser. Slivken, S.; Jelen, C. // Applied Physics Letters;11/3/1997, Vol. 71 Issue 18, p2593 

    Demonstrates the growth of a quantum cascade laser by gas-source molecular beam epitaxy. Basis for the calculation of wave functions and energy levels; Effect of heat dissipation on the quantum laser; Use of photolithography and wet chemical etching to process the waveguide cladding of lasers.

  • Stimulated emission from a Cd1-xMnxTe-CdTe multilayer structure. Bicknell, R. N.; Giles-Taylor, N. C.; Schetzina, J. F.; Anderson, N. G.; Laidig, W. D. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p238 

    In this letter we report the first observation of stimulated emission from an optically pumped Cd[sub 1-x]Mn[sub x] Te-CdTe multilayer structure. This new laser structure was grown by molecular beam epitaxy and consists of an active superlattice (SL) region containing 25 CdTe quantum wells...

  • Low threshold current AlGaAs/GaAs distributed feedback laser grown by two-step molecular beam epitaxy. Kojima, Keisuke; Noda, Susumu; Mitsunaga, Kazumasa; Kyuma, Kazuo; Nakayama, Takashi // Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p570 

    AlGaAs/GaAs distributed feedback lasers with oxide-stripe structure were fabricated by two-step molecular beam epitaxy (MBE) growth for the first time. The large coupling coefficient of 90 cm-1 was obtained by controlling precisely the thickness of each layer. As a result, the threshold current...

  • ZnMgSe/ZnCdSe-Based Distributed Bragg Mirrors Grown by Molecular-Beam Epitaxy on ZnSe Substrates. Kozlovskii, V. I.; Trubenko, P. A.; Korostelin, Yu. V.; Roddatis, V. V. // Semiconductors;Oct2000, Vol. 34 Issue 10, p1186 

    Molecular-beam epitaxy was used to grow distributed Bragg mirrors on ZnSe substrates. These mirrors are composed of 10.5 and 20 pairs of alternating quarter-wave ZnMgSe and ZnCdSe layers with reflectance peaks at the wavelengths of 530 and 560 nm, respectively, which fall in the transparency...

  • Guiding and antiguiding effects in epitaxially regrown vertical-cavity surface-emitting lasers. Oh, T.-H.; McDaniel, M. R.; Huffaker, D. L.; Deppe, D. G. // Applied Physics Letters;6/1/1998, Vol. 72 Issue 22 

    The fabrication and optical mode characteristics of epitaxially regrown vertical-cavity surface-emitting lasers are presented. Modeling suggests that a highly resistive AlGaAs current blocking layer grown at low temperature by molecular beam epitaxy can be used to form an antiguiding structure,...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics