Electronic states created in p-Si subjected to plasma etching: The role of inherent impurities

Awadelkarim, O.O.; Gu, T.; Mikulan, P.I.; Ditizio, R.A.; Fonash, S.J.; Reinhardt, K.A.; Chan, Y.D.
March 1993
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p958
Academic Journal
Examines the role of inherent impurities, point defect and hydrogen for the creation of electronic states in p-silicon substrate. Monitor of gap states with deep-level transient spectroscopy; Identification of gap states as the carbon-interstitial oxygen-interstitial pair.


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