Influence of arsenic adsorption layers on heterointerfaces in GaInAs/InP quantum well structures

Seifert, W.; Liu, X.; Samuelson, L.
March 1993
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p949
Academic Journal
Examines the influence of arsenic adsorption layers on heterointerfaces in gallium indium arsenide/indium phosphide (GaInAs/InP) quantum well structures. Correlation between AsH[sub 3] concentration and growth temperature; Formation of interface layers on the upper GaInAs/InP transition.


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