TITLE

Deposition of dense hydrocarbon films from a nonbiased microwave plasma

AUTHOR(S)
von Keudell, A.; Moller, W.; Hytry, R.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p937
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the deposition of dense hydrocarbons films from a nonbiased microwave plasma. Preparation on C:H layers from methane; Dependence of temperature on deposition rate; Identification of the different deposition processes.
ACCESSION #
4337866

 

Related Articles

  • Electron-cyclotron-resonant microwave plasma system for thin-film deposition. Mejia, S. R.; McLeod, R. D.; Kao, K. C.; Card, H. C. // Review of Scientific Instruments;Mar86, Vol. 57 Issue 3, p493 

    A new microwave plasma method for the fabrication of solid films is presented. Microwave power is efficiently transferred to the plasma, resulting in minimal power requirements. Uniform silicon films have been fabricated with a wide range of optical and electronic properties, at high deposition...

  • Deposition mechanism of SiO2 film by low-pressure microwave-discharged plasma. Murakami, Eiichi; Kimura, Shin-ichiro; Miyake, Kiyoshi; Warabisako, Terunori; Wada, Yasuo // Journal of Applied Physics;10/1/1987, Vol. 62 Issue 7, p3063 

    Presents a study that qualitatively investigated the deposition mechanism of SiO[sub2] film by low-pressure microwave-discharged plasma. Background on plasma-enhanced chemical vapor deposition; Analysis of the spatial distribution of film thickness; Assessment of the results of etch rate...

  • Modeling of Moderate Pressure Microwave Plasmas Used for Diamond Deposition: Collisional Data Required for Process Simulation. Hassouni, K.; Gicquel, A. // AIP Conference Proceedings;2002, Vol. 636 Issue 1, p61 

    Different aspects of the modeling of moderate pressure hydrogen and hydrogen methane plasma obtained under conditions relevant to diamond thin films deposition are discussed. First, a collisional-radiative model (CRM) of H[sub 2] plasmas is presented and used in the frame of a quasi-homogenous...

  • Adhesion of polycrystalline diamond thin films on single-crystal silicon substrates. Gamlen, C.A.; Case, E.D.; Reinhard, D.K.; Huang, B. // Applied Physics Letters;11/11/1991, Vol. 59 Issue 20, p2529 

    Investigates the adhesion of polycrystalline diamond thin films on single-crystal silicon substrates. Use of microwave plasma disk reactor; Production of circular delaminations between the film and substrate; Correlation between delamination diameter and square root of the coating grain size.

  • The generation and detection of high flux atomic oxygen for physical vapor deposition thin film... Ingle, N.J.C.; Hammond, R.H.; Beasley, M.R.; Blank, D.H.A. // Applied Physics Letters;12/27/1999, Vol. 75 Issue 26, p4162 

    Develops a flow-through microwave plasma source to generate large atomic oxygen fluxes while maintaining vacuum pressures of less than .0001 Torr. Use of an oxidizing agent to improve the growth of many epitaxial thin-film oxides; Continuous and real-time detection of the atomic oxygen.

  • Nanoindentation hardness and adhesion investigations of vapor deposited nanostructured diamond films. Catledge, Shane A.; Borham, James; Vohra, Yogesh K.; Lacefield, William R.; Lemons, Jack E. // Journal of Applied Physics;4/15/2002, Vol. 91 Issue 8, p5347 

    The effect of changing the N[sub 2]/CH[sub 4] feedgas ratio on the structure and mechanical properties of microwave plasma chemical vapor deposited diamond films grown on Ti–6Al–4V alloy substrates was investigated. The relative concentration of CH[sub 4] and N[sub 2] (in a balance...

  • Characterization of diamond films synthesized in the microwave plasmas of CO/H2 and CO/O2/H2 systems at low temperatures (403–1023 K). Muranaka, Yasushi; Yamashita, Hisao; Miyadera, Hiroshi // Journal of Applied Physics;6/15/1991, Vol. 69 Issue 12, p8145 

    Describes a study which characterized the diamond films synthesized in the microwave plasmas of CO/H[sub2] and CO/O[sub2]/H[sub2] systems at low temperatures. Industrial application of diamond films; Crystallinity of the film; Growth rates of the film; Measurement of cathodoluminescence spectra.

  • Activation of methane in microwave plasmas at high pressure. Huang, Jian; Suib, Steven; Harrison, Jeffrey B.; Knight, Frank // Research on Chemical Intermediates;2001, Vol. 27 Issue 6, p643 

    Methane is converted to C2 products in a microwave plasma under pressure up to 400 torr at maximum plasma power of 100 W. Steam is introduced with methane into the plasma zone in order to suppress coke formation. Major products are C2 hydrocarbons. Small amounts of benzene are also formed. Very...

  • Neutral product analysis of the microwave C2H2 plasma: Cn, CnH2, CnH3, CnH4, CnH5, and larger... Fujii, Toshihiro // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2056 

    Studies the product analysis of microwave C2H2 discharge by Li+ ion attachment mass spectroscopy demonstrating the unexpected formation of unfamiliar hydrocarbon neutral products. Detection of radicals; Discharge conditions during peak intensities; Partial mass spectra of Li+ ion adducts.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics