TITLE

Self-stabilization of fundamental in-phase mode in resonant antiguided laser arrays

AUTHOR(S)
Nabiev, R.F.; Yeh, P.; Botez, D.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p916
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the self-stabilization of fundamental in-phase mode in resonant antiguided laser arrays. Effect of gain spatial hole burning on antiguided arrays; Correlation between drive level and defocusing properties of laser arrays; Nonuniformity of the in-phase-mode intensity profile for nonresonant devices.
ACCESSION #
4337859

 

Related Articles

  • Fast burning of persistent spectral holes in small laser spots using photon-gated materials. Moerner, W. E.; Carter, T. P.; Bräuchle, C. // Applied Physics Letters;2/23/1987, Vol. 50 Issue 8, p430 

    We report extremely fast (30 ns) burning of detectable persistent spectral holes in 200-μm-diam laser spots using a new photon-gated donor-acceptor material: a derivative of zinc-tetrabenzoporphyrin as a donor with chloroform acceptors in a poly(methylmethacrylate) thin film. The fast burning...

  • III-V interband 5.2 microm laser operating at 185 K. Flatte, Michael E.; Hasenberg, T.C. // Applied Physics Letters;12/29/1997, Vol. 71 Issue 26, p3764 

    Demonstrates the operation of III-V interband laser at specific temperature and wavelength. Performance of the laser under optical pumping; Correlation between light output and input pump intensity; Implication of the presence of spectral hole for lasing spectra.

  • Binary-optics miniature Talbot cavities for laser beam addition. Leger, J. R.; Griswold, M. P. // Applied Physics Letters;1/1/1990, Vol. 56 Issue 1, p4 

    A miniature external cavity has been fabricated from a single 4.5 mm substrate for coherent beam addition of a linear AlGaAs laser array. Binary-optics elements are fabricated on the front surface for laser beam collimation and onto the back surface for lateral mode selection....

  • Distributed nature of quantum-well lasers. Tessler, N.; Eisenstein, G. // Applied Physics Letters;1/4/1993, Vol. 62 Issue 1, p10 

    Examines the distributed nature of quantum well lasers. Use of detailed model of current injection; Analysis of electron and hole distribution in space and in energy; Variation of the static and dynamic laser responses.

  • Oxygen pressure dependence of in situ growth of NdCeCuO thin films by laser ablation. Wen-Tai Lin; Yung-Fu Chen // Applied Physics Letters;4/18/1994, Vol. 64 Issue 16, p2157 

    Examines the oxygen pressure dependence of neodymium cesium copper oxide (NCCO) thin films through laser ablation. Process for improving the superconductivity of the films; Effects of oxygen vacancies on NCCO thin films; Analysis of thermodynamical stability of NCCO films.

  • Plasmon-phonon-assisted electron-hole recombination in silicon at high laser fluence. Rasolt, Mark; Malvezzi, Andrea Marco; Kurz, Heinz // Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2208 

    We present both theoretical and experimental results in silicon which clearly demonstrate that at time scales of 20 to 40 ps, after the pump laser pulse and at fluences greater than 100 mJ/cm2, the carrier density of the electron-hole plasma drops for increasing fluence; this is not explained by...

  • Selectively Etched Tunnel Junction for Lateral Current and Optical Confinement in InP-Based Vertical Cavity Lasers. Reddy, M. H. M.; Asano, T.; Feezell, D.; Buell, D. A.; Huntington, A. S.; Koda, R.; Coldren, L. A. // Journal of Electronic Materials;Feb2004, Vol. 33 Issue 2, p118 

    We demonstrate a thin, selectively lateral-etched, AlIn(Ga)As tunnel-junction (TJ) layer as a current and optical confinement aperture in the InP-based long-wavelength vertical cavity surface-emitting lasers (VCSELs). A high etch selectivity was demonstrated by etching the aperture a distance of...

  • Condensed-matter physics: The dance of electrons and holes. Scholes, Gregory D. // Nature;8/26/2010, Vol. 466 Issue 7310, p1047 

    In this article the author provides insights into how electrons and holes interact in a semiconductor at low temperature. The author states that electron and hole experience a weak Coulombic attraction to each other and are correlated in the semiconductor. The author contends that the number of...

  • Dark pulse formation in a quantum-dot laser. Zimmermann, J.; Cundiff, S. T.; von Plessen, G.; Feldmann, J.; Arzberger, M.; Bo¨hm, G.; Amann, M.-C.; Abstreiter, G. // Applied Physics Letters;7/2/2001, Vol. 79 Issue 1, p18 

    The laser emission of an InAs/GaAs quantum-dot laser after injection of a nonresonant optical pulse is time resolved using femtosecond upconversion. The injected pulse burns a hole into the gain spectrum that leads to an ultrafast redistribution of carriers away from the lasing wavelength,...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics