TITLE

Van der Waals bonding of GaAs on Pd leads to a permanent, solid-phase-topotaxial, metallurgical

AUTHOR(S)
Yablonovitch, E.; Sands, T.; Hwang, D.M.; Scnitzer, I.; Gmitter, T.J.; Shastry, S.K.; Hill, D.S.; Fan, J.C.C.
PUB. DATE
December 1991
SOURCE
Applied Physics Letters;12/9/1991, Vol. 59 Issue 24, p3159
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effect of Van der Waals bonding of gallium arsenide on palladium. Creation of a permanent, metallurgical bond; Occurrence of low temperature solid-phase-topotaxial reaction; Characterization of the resulting metallurgy bond.
ACCESSION #
4337798

 

Related Articles

  • Deposition of CaF2 and GaF3 on sulfur passivated GaAs(111)A, 100, and (111)B surfaces. Scimeca, T.; Muramatsu, Y.; Oshima, M.; Oigawa, H.; Nannichi, Y.; Ohno, T. // Journal of Applied Physics;5/1/1992, Vol. 71 Issue 9, p4405 

    Presents a study which investigated the interfacial chemical bonding for GaF[sub3] and CaF[sub2] deposited on S passivated gallium arsenide (111)A, 100, and (111)B surfaces. Experimental details; Results and discussion; Conclusions.

  • Chemical bonding and structure of the sulfur treated GaAs(111)B surface. Moriarty, P.; Murphy, B. // Applied Physics Letters;7/17/1995, Vol. 67 Issue 3, p383 

    Investigates the atomic structure and chemical bonding of the sulfur exposed GaAs surfaces using scanning tunneling microscopy (STM) and synchrotron radiation core-level photoemission. Implications of the STM results; Purpose of using the UHV tunneling microscope; Components necessary to fit...

  • Chemical bonding and electronic properties of SeS...-treated GaAs(100). Sun, Jingxi; Seo, Dong Ju // Journal of Applied Physics;1/15/1999, Vol. 85 Issue 2, p969 

    Presents information on a study which examined the chemical bonding and electronic properties of gallium arsenide(100) surfaces passivated by selenium sulfide using wet chemical techniques with photoemission spectroscopy. Experimental procedures; Results and discussion; Conclusions.

  • Characterization of thin AlGaAs/InGaAs/GaAs quantum-well structures bonded directly to SiO2/Si and glass substrates. Klem, J. F.; Jones, E. D.; Myers, D. R.; Lott, J. A. // Journal of Applied Physics;7/1/1989, Vol. 66 Issue 1, p459 

    Provides information on the characterization of strained aluminum gallium arsenide/indium gallium arsenide/gallium arsenide quantum-well structures bonded directly to glass or silicon dioxide-coated silicon substrates. Preparation of glass slides or silicon dioxide-coated silicon substrates;...

  • Reaction dynamics of the As-rich GaAs(001)-2x4 surface with monoenergetic Br[sub 2] molecules: A... Yong Liu; Komrowski, Andrew J.; Kummel, Andrew C. // Journal of Chemical Physics;3/1/1999, Vol. 110 Issue 9, p4608 

    Investigates the adsorption of 0.15-eV and 0.89-eV bromine onto the arsenic-rich gallium arsenide surface at 300 Kelvin on the atomic scale over a wide range of total Br coverage using scanning tunneling microscopy. Chemical activation of the strained As-As dimer bonds and the As-Ga back bonds...

  • Bond length variation in In...Ga...As.../InP epitaxial layers thicker than the critical thickness. Tormen, M.; De Salvador, D. // Journal of Applied Physics;9/1/1999, Vol. 86 Issue 5, p2533 

    Presents information on a study which measured the gallium-arsenide bond length in indium-gallium arsenide epitaxial thin films using x-ray absorption fine structure (XAFS). Experimental and XAFS data analysis; Results and discussion; Conclusions.

  • Interface of directly bonded GaAs and InP. Jin-Phillipp, N. Y.; Sigle, W.; Black, A.; Babic, D.; Bowers, J. E.; Hu, E. L.; Ru¨hle, M. // Journal of Applied Physics;1/15/2001, Vol. 89 Issue 2, p1017 

    The structure and composition of the interface of directly bonded GaAs and InP (001) wafers has been studied with various techniques in electron microscopy. For each interface three different dislocation networks have been identified and analyzed. They have been confirmed to accommodate the...

  • Chemical investigations of GaAs wafer bonded interfaces. Hansen, D. M.; Albaugh, C. E.; Moran, P. D.; Kuech, T. F. // Journal of Applied Physics;12/15/2001, Vol. 90 Issue 12, p5991 

    The bonding chemistry of various GaAs-to-oxide/GaAs bonded samples was investigated using multiple internal transmission Fourier transform infrared spectroscopy for thermally annealed and thermocompression annealed samples. The oxides used in these investigations included a native GaAs oxide as...

  • Amorphization and solid-phase epitaxial growth in tin-ion-implanted gallium arsenide. Taniwaki, Masafumi; Koide, Hideto; Yoshimoto, Naoto; Yoshiie, Toshimasa; Ohnuki, Somei; Maeda, Masao; Sassa, Koichi // Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p4036 

    Presents a study that evaluated the amorphization and recrystallization of tin-ion-implanted gallium arsenide semiconductors. Analysis of the amorphous-crystalline interface; Examination of the structural changes in the semiconductor; Contribution of stress to the amorphous-crystalline interface.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics