TITLE

Metalorganic molecular beam epitaxy of 1.3 mum quaternary layers and heterostructure lasers

AUTHOR(S)
Hamm, R.A.; Ritter, D.; Temkin, H.; Panish, M.B.; Vandenberg, J.M.; Yadvish, R.D.
PUB. DATE
October 1991
SOURCE
Applied Physics Letters;10/7/1991, Vol. 59 Issue 15, p1893
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the metalorganic molecular beam epitaxy of indium gallium arsenic phosphide quaternary layers. Dependence of gallium incorporation on the growth temperature; Increase of photoluminescence linewidth; Measurement of the threshold current densities.
ACCESSION #
4337760

 

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