Metalorganic molecular beam epitaxy of 1.3 mum quaternary layers and heterostructure lasers

Hamm, R.A.; Ritter, D.; Temkin, H.; Panish, M.B.; Vandenberg, J.M.; Yadvish, R.D.
October 1991
Applied Physics Letters;10/7/1991, Vol. 59 Issue 15, p1893
Academic Journal
Investigates the metalorganic molecular beam epitaxy of indium gallium arsenic phosphide quaternary layers. Dependence of gallium incorporation on the growth temperature; Increase of photoluminescence linewidth; Measurement of the threshold current densities.


Related Articles

  • In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)As. Gerard, Jean-Michel // Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2096 

    Examines the growth mode shift upon indium arsenide deposition by molecular beam epitaxy on a pseudomorphic buffer layer grown on gallium arsenide. Sensitivity of the shift critical thickness to indium composition; Surface segregation of indium atoms; Impact of film thickness on the growth mode.

  • Optical characterization of InAs monolayer structures grown on (113)A and (001) GaAs substrates. Melendez, J.; Mazuelas, A.; Dominguez, P.S.; Garriga, M.; Alonso, M.I.; Tapfer, L.; Briones, F. // Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p1000 

    Presents the optical characterization of indium arsenide (InAs) monolayer structures grown on (113)A and (001) gallium arsenide substrates. Growth of structures by atomic layer molecular beam epitaxy; Comparison between the band offset and InAs segregation of (113) and (001) samples.

  • High quality Si/Si[sub 1-x]Ge[sub x] layered structures grown using a mass-spectrometry.... Ni, W.-X.; Henry, A. // Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1712 

    Examines the growth of high quality Si/Si[sub 1-x]Ge[sub x] layered structures using molecular beam epitaxy with a mass spectrometry controlled e-beam evaporation system. Improvement of the accuracy and stability of the evaporation rates; Achievement of good control of the growth parameters;...

  • Feature size effects on selective area epitaxy of InGaAs. Cotta, M.A.; Harriott, L.R. // Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1936 

    Examines the use of ultrathin silicon layer as a mask in selective area epitaxy of indium gallium arsenide (InGaAs) by metalorganic molecular beam epitaxy. Increase in the growth rate of InGaAs; Details on the migration length of In and Ga containing species on the crystal surface; Impact of...

  • Effect of doping on electron traps in metalorganic molecular-beam epitaxial.... Paloura, E.C.; Ginoudi, A.; Kiriakidis, G.; Christou, A. // Applied Physics Letters;12/9/1991, Vol. 59 Issue 24, p3127 

    Examines the formation of trap centers in Ga[sub x]In[sub 1-x]P/GaAs layers fabricated by molecular beam epitaxy. Use of transient spectroscopy; Inhibition of trap center with the aid of silicon and silicon doping; Dependence of the activation energy on the gallium mole fraction.

  • Local silicon molecular beam epitaxy with microshadow masks. Hammerl, E.; Eisele, I. // Applied Physics Letters;5/3/1993, Vol. 62 Issue 18, p2221 

    Presents a method for patterning of silicon layers grown by molecular beam epitaxy. Use of microshadow masks; Study of the geometrical shape of the deposited mesa pattern; Inclination of the mesa pattern.

  • Characterization of heteroepitaxial CuIn[sub 3]Se[sub 5] and CuInSe[sub 2] layers on Si substrates. Tiwari, A.N.; Blunier, S. // Applied Physics Letters;12/26/1994, Vol. 65 Issue 26, p3347 

    Examines the growth of CuIn[sub 3]Se[sub 5] on CuInSe[sub 2]/Si(111) substrates by molecular beam epitaxy. Description of the photoemission properties of CuInSe[sub 2] and CuIn[sub 3]Se[sub 5] layers; Exhibition of peak structure in CuInSe[sub 2] valence band; Importance of CuInSe[sub 2] for...

  • Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs.... Solomon, G.S.; Trezza, J.A. // Applied Physics Letters;2/20/1995, Vol. 66 Issue 8, p991 

    Investigates the growth temperature and monolayer coverage of the InAs Stranski Krastanov island growth in GaAs based on molecular beam epitaxy. Observation of transition region in SK growth between isolated island; Analysis of the growth of InAs islands; Increase of the two-dimensional layer in...

  • Visible electroluminescence from Eu:CaF[sub 2] layers grown by molecular beam epitaxy on p-Si (100). Chatterjee, T.; McCann, P.J. // Applied Physics Letters;12/22/1997, Vol. 71 Issue 25, p3610 

    Examines visible electroluminescence (EL) from europium:CaF[sub 2] layers with high europium concentrations grown epitaxially on silicon using molecular beam epitaxy. Description of the EL spectra; Presentation of pronounced long wavelength tail; Achievement of the best EL intensity stability.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics