TITLE

Effect of germanium implantation on metal-oxide-semiconductor avalanche injection

AUTHOR(S)
Ta-Cheng Lin; Young, Donald R.
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3499
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the effect of germanium implantation on metal-oxide-semiconductor avalanche injection. Implantation of various doses of germanium into the Si-SiO[sub 2] interface; Use of the avalanche injection technique to generate hot electrons in the substrate; Description of avalanche injection by Young and Nicollian.
ACCESSION #
4329815

 

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